Effect of H2 and H2O on the total dose effect of bipolar devices

MA Wuying; GOU Shilong; GUO Hongxia; YAO Zhibin; HE Baoping; WANG Zujun; SHENG Jiangkun

doi:10.11805/tkyda2022003

[2] DEPARTMENT of DEFENSE. Test method stand microcircuits:MIL-STD-883[S/OL]. https://assist.daps.dla.mil.

[3] EUROPEAN SPACE AGENCY. Total dose steady-state irradiation test method:ESCC detail specification No.22900[S/OL]. https:// escies.org.

[4] FLEETWOOD D M, RODGERS M P, TSETSERIS L, et al. Effects of device aging on microelectronics radiation response and reliability[J]. Microelectronics Reliability, 2007,47(7):1075-1085.

[5] PEASE R L,PLATTETER D G,DUNHAM G W,et al. The effects of hydrogen in hermetically sealed packages on the total dose and dose rate response of bipolar linear circuits[J]. IEEE Transactions on Nuclear Science, 2007,54(6):2168-2173.

[6] CHEN X J, BARNABY H J, PHILIPPE Adell, et al. Modeling the dose rate response and the effects of hydrogen in bipolar technologies[J]. IEEE Transactions on Nuclear Science, 2009,56(6):3196-3202.

[7] ROWSEY N L,LAW M E,SCHRIMPF R D,et al. A quantitative model for ELDRS and degradation effects in irradiated oxides based on first principles calculations[J]. IEEE Transactions on Nuclear Science, 2011,58(6):2937-2944.

[8] FLEETWOOD D M. Effects of hydrogen transport and reactions on microelectronics radiation response and reliability[J]. Microelectronics Reliability, 2002(42):523-541.

[9] KOHLER R A,KUSHNER R A,LEE K H. Total dose radiation hardness of MOS devices in hermetic ceramic packages[J]. IEEE Transactions on Nuclear Science, 1988,35(6):1492-1496.

[10] CHEN X J,BARNABY H J,VERMEIRE B,et al. Mechanisms of enhanced radiation-induced degradation due to excess molecular hydrogen in bipolar oxides[J]. IEEE Transactions on Nuclear Science, 2007,54(6):1913-1919.

[11] KARMARKAR A P,CHOI B K,SCHRIMPF R D,et al. Aging and baking effects on the radiation hardness of MOS capacitors[J]. IEEE Transactions on Nuclear Science, 2001,48(6):2158-2163.

[12] SHANEYFELT M R, SCHWANK J R, DODD P E, et al. Effects of moisture on radiation-induced degradation in CMOS SOI transistors[J]. IEEE Transactions on Nuclear Science, 2010,57(4):1777-1780.

[16] ARWICK A D,JOYCE C L,RODBELL K P. Hydrogen redistribution and gettering in AlCu/Ti thin films[J]. Journal of Applied Physics, 1991,69(11):7921-7923.

[17] SHELBY J E. Molecular diffusion and solubility of hydrogen isotopes in vitreous silica[J]. Journal of Applied Physics, 1977,48 (8):3387-3394.

[19] BATYREV I G,TUTTLE B,FLEETWOOD D M,et al. Reactions of water molecules in silica-based network glasses[J]. Physical Review Letters, 2008,100(10):105503.1-105503.4.

[20] BAKOS T, RASHKEEV S N, PANTELIDES S T. H2O and O2 molecules in amorphous SiO2: defect formation and annihilation mechanisms[J]. Physical Review B, 2004,69(19):195206.1-195206.9.