In order to study the effect of H2 and H2O on the radiation effect of domestic bipolar devices, a typical gate-controlled bipolar transistor is designed, and the irradiation tests in different concentrations of H2 are carried out, as well as the total dose irradiation tests after the temperature and humidity tests. The results show that the anti-radiation ability of the device decreases gradually with the increase of hydrogen concentration. After the temperature and humidity test, the radiation damage of the device increases with the entry of H2O. On this basis, gate scanning method is employed to quantitatively separate the radiation-induced defects of the oxide layer. It is found that both H2 and H2O will cause the increase of the radiation-induced interface trap charge Nit after entering into the oxide layer. In addition, the potential mechanism of H2 and H2O induced damage enhancement is given by theoretical analysis. The research results are of great value to the evaluation of the anti-radiation performance of electronic systems in radiation environment.