• Chinese Journal of Lasers
  • Vol. 36, Issue 2, 328 (2009)
Zhu Yiming1、2、*, Zhang Dawei1, He Boyong2, and Zhuang Songlin1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    Zhu Yiming, Zhang Dawei, He Boyong, Zhuang Songlin. Strong Band Mixing in Bulk GaAs under High Electric Field Investigated by Time-Domain Terahertz Spectroscopy[J]. Chinese Journal of Lasers, 2009, 36(2): 328 Copy Citation Text show less

    Abstract

    Nonequilibrium transport of carriers in bulk GaAs under very high electric fields is investigated by time-domain terahertz (THz) emission spectroscopy. It is found that the initial peak height of THz emission waveforms (ΔETHz), which are corresponding to the acceleration of electrons in the Γ valley, gradually increases with increasing bias electric fields F0, for F0<50 kV/cm and saturates at ~1 THz above 50 kV/cm. The experimental results show that the effective acceleration mass of electrons under high electric fields significantly increases with increasing fields (30 times at 300 kV/cm than low bias electric fields), most likely due to strong band mixing under very high fields.
    Zhu Yiming, Zhang Dawei, He Boyong, Zhuang Songlin. Strong Band Mixing in Bulk GaAs under High Electric Field Investigated by Time-Domain Terahertz Spectroscopy[J]. Chinese Journal of Lasers, 2009, 36(2): 328
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