• Photonics Research
  • Vol. 9, Issue 9, 1752 (2021)
Jun-Feng Wang1、2、3, Ji-Yang Zhou1、2, Qiang Li1、2, Fei-Fei Yan1、2, Mu Yang1、2, Wu-Xi Lin1、2, Ze-Yan Hao1、2, Zhi-Peng Li1、2, Zheng-Hao Liu1、2, Wei Liu1、2, Kai Sun1、2, Yu Wei4, Jian-Shun Tang1、2, Jin-Shi Xu1、2、*, Chuan-Feng Li1、2、5, and Guang-Can Guo1、2
Author Affiliations
  • 1CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
  • 2CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
  • 3College of Physics, Sichuan University, Chengdu 610065, China
  • 4Center for Micro- and Nanoscale Research and Fabrication, University of Science and Technology of China, Hefei 230027, China
  • 5e-mail: cfli@ustc.edu.cn
  • show less
    DOI: 10.1364/PRJ.431618 Cite this Article Set citation alerts
    Jun-Feng Wang, Ji-Yang Zhou, Qiang Li, Fei-Fei Yan, Mu Yang, Wu-Xi Lin, Ze-Yan Hao, Zhi-Peng Li, Zheng-Hao Liu, Wei Liu, Kai Sun, Yu Wei, Jian-Shun Tang, Jin-Shi Xu, Chuan-Feng Li, Guang-Can Guo. Optical charge state manipulation of divacancy spins in silicon carbide under resonant excitation[J]. Photonics Research, 2021, 9(9): 1752 Copy Citation Text show less
    References

    [1] W. F. Koehl, B. B. Buckley, F. J. Heremans, G. Calusine, D. D. Awschalom. Room temperature coherent control of defect spin qubits in silicon carbide. Nature, 479, 84-87(2011).

    [2] A. L. Falk, B. B. Buckley, G. Calusine, W. F. Koehl, V. V. Dobrovitski, A. Politi, C. A. Zorman, P. X.-L. Feng, D. D. Awschalom. Polytype control of spin qubits in silicon carbide. Nat. Commun., 4, 1819(2013).

    [3] A. Lohrmann, B. C. Johnson, J. C. McCallum, S. Castelletto. A review on single photon sources in silicon carbide. Rep. Prog. Phys., 80, 034502(2017).

    [4] J. F. Wang, Y. Zhou, Z. Y. Wang, A. Rasmita, J. Q. Yang, X. J. Li, H. J. von Bardeleben, W. B. Gao. Bright room temperature single photon source at telecom range in cubic silicon carbide. Nat. Commun., 9, 4106(2018).

    [5] M. Widmann, S. Y. Lee, T. Rendler, N. T. Son, H. Fedder, S. Paik, L. P. Yang, N. Zhao, S. Yang, I. Booker, A. Denisenko, M. Jamali, S. A. Momenzadeh, I. Gerhardt, T. Ohshima, A. Gali, E. Janzén, J. Wrachtrup. Coherent control of single spins in silicon carbide at room temperature. Nat. Mater., 14, 164-168(2015).

    [6] D. J. Christle, A. L. Falk, P. Andrich, P. V. Klimov, J. U. Hassan, N. T. Son, E. Janzén, T. Ohshima, D. D. Awschalom. Isolated electron spins in silicon carbide with millisecond coherence times. Nat. Mater., 14, 160-163(2015).

    [7] F. Fuchs, B. Stender, M. Trupke, D. Simin, J. Pflaum, V. Dyakonov, G. V. Astakhov. Engineering near-infrared single-photon emitters with optically active spins in ultrapure silicon carbide. Nat. Commun., 6, 7578(2015).

    [8] C. P. Anderson, A. Bourassa, K. C. Miao, G. Wolfowicz, P. J. Mintun, A. L. Crook, H. Abe, J. Ul Hassan, N. T. Son, T. Ohshima, D. D. Awschalom. Electrical and optical control of single spins integrated in scalable semiconductor devices. Science, 366, 1225-1230(2019).

    [9] D. J. Christle, P. V. Klimov, C. F. de las Casas, K. Szász, V. Ivády, V. Jokubavicius, J. U. Hassan, M. Syväjärvi, W. F. Koehl, T. Ohshima, N. T. Son, E. Janzén, Á. Gali, D. D. Awschalom. Isolated spin qubits in SiC with a high fidelity infrared spin-to-photon interface. Phys. Rev. X, 7, 021046(2017).

    [10] J.-F. Wang, F.-F. Yan, Q. Li, Z.-H. Liu, H. Liu, G.-P. Guo, L.-P. Guo, X. Zhou, J.-M. Cui, J. Wang, Z.-Q. Zhou, X.-Y. Xu, J.-S. Xu, C.-F. Li, G.-C. Guo. Coherent control of nitrogen-vacancy center spins in silicon carbide at room temperature. Phys. Rev. Lett., 124, 223601(2020).

    [11] Z. Mu, S. A. Zargaleh, H. J. von Bardeleben, J. E. Fröch, H. Cai, X. Yang, J. Yang, X. Li, I. Aharonovich, W. Gao. Coherent manipulation with resonant excitation and single emitter creation of nitrogen vacancy centers in 4H silicon carbide. Nano Lett., 20, 6142-6147(2020).

    [12] Q. Li, J.-F. Wang, F.-F. Yan, J.-Y. Zhou, H.-F. Wang, H. Liu, L.-P. Guo, X. Zhou, A. Gali, Z.-H. Liu, Z.-Q. Wang, K. Sun, G.-P. Guo, J.-S. Tang, J.-S. Xu, C.-F. Li, G.-C. Guo. Room temperature coherent manipulation of single-spin qubits in silicon carbide with high readout contrast(2020).

    [13] A. L. Crook, C. P. Anderson, K. C. Miao, A. Bourassa, H. Lee, S. L. Bayliss, D. O. Bracher, X. Zhang, H. Abe, T. Ohshima, E. L. Hu, D. D. Awschalom. Purcell enhancement of a single silicon carbide color center with coherent spin control. Nano Lett., 20, 3427-3434(2020).

    [14] A. Bourassa, C. P. Anderson, K. C. Miao, M. Onizhuk, H. Ma, A. L. Crook, H. Abe, J. Ul-Hassan, T. Ohshima, N. T. Son, G. Galli, D. D. Awschalom. Entanglement and control of single nuclear spins in isotopically engineered silicon carbide. Nat. Mater., 19, 1319-1325(2020).

    [15] S. J. Whiteley, G. Wolfowicz, C. P. Anderson, A. Bourassa, H. Ma, M. Ye, G. Koolstra, K. J. Satzinger, M. V. Holt, F. J. Heremans, A. N. Cleland, D. I. Schuster, G. Galli, D. D. Awschalom. Spin-phonon interactions in silicon carbide addressed by Gaussian acoustics. Nat. Phys., 15, 490-495(2019).

    [16] G. Wolfowicz, S. J. Whiteley, D. D. Awschalom. Electrometry by optical charge conversion of deep defects in 4H-SiC. Proc. Natl. Acad. Sci. USA, 115, 7879-7883(2018).

    [17] J.-F. Wang, J.-M. Cui, F.-F. Yan, Q. Li, Z.-D. Cheng, Z.-H. Liu, Z.-H. Liu, J.-S. Xu, C.-F. Li, G.-C. Guo. Optimization of power broadening in optically detected magnetic resonance of defect spins in silicon carbide. Phys. Rev. B, 101, 064102(2020).

    [18] Y. Zhou, J. F. Wang, X. M. Zhang, K. Li, J. M. Cai, W. B. Gao. Self-protected thermometry with infrared photons and defect spins in silicon carbide. Phys. Rev. Appl., 8, 044015(2017).

    [19] F. F. Yan, J. F. Wang, Q. Li, Z. D. Cheng, J. M. Cui, W. Z. Liu, J. S. Xu, C. F. Li, G. C. Guo. Coherent control of defect spins in silicon carbide above 550 K. Phys. Rev. Appl., 10, 044042(2018).

    [20] A. L. Falk, P. V. Klimov, B. B. Buckley, V. Ivády, I. A. Abrikosov, G. Calusine, W. F. Koehl, Á. Gali, D. D. Awschalom. Electrically and mechanically tunable electron spins in silicon carbide color centers. Phys. Rev. Lett., 112, 187601(2014).

    [21] P. Siyushev, H. Pinto, M. Vörös, A. Gali, F. Jelezko, J. Wrachtrup. Optically controlled switching of the charge state of a single nitrogen-vacancy center in diamond at cryogenic temperatures. Phys. Rev. Lett., 110, 167402(2013).

    [22] D. A. Golter, C. W. Lai. Optical switching of defect charge states in 4H-SiC. Sci. Rep., 7, 13406(2017).

    [23] B. Magnusson, N. T. Son, A. Csóré, A. Gällström, T. Ohshima, A. Gali, I. G. Ivanov. Excitation properties of the divacancy in 4H-SiC. Phys. Rev. B, 98, 195202(2018).

    [24] G. Wolfowicz, C. P. Anderson, A. L. Yeats, S. J. Whiteley, J. Niklas, O. G. Poluektov, F. J. Heremans, D. D. Awschalom. Optical charge state control of spin defects in 4H-SiC. Nat. Commun., 8, 1876(2017).

    [25] M. Bockstedte, F. Schütz, T. Garratt, V. Ivády, A. Gali. Ab initio description of highly correlated states in defects for realizing quantum bits. npj Quant. Mater., 3, 31(2018).

    [26] S. A. Zargaleh, H. J. von Bardeleben, J. L. Cantin, U. Gerstmann, S. Hameau, B. Eble, W. Gao. Electron paramagnetic resonance tagged high-resolution excitation spectroscopy of NV-centers in 4H-SiC. Phys. Rev. B, 98, 214113(2018).

    [27] K. Khazen, H. J. von Bardeleben, S. A. Zargaleh, J. L. Cantin, M. Zhao, W. B. Gao, T. Biktagirov, U. Gerstmann. High-resolution resonant excitation of NV centers in 6H – SiC: a matrix for quantum technology applications. Phys. Rev. B, 100, 205202(2019).

    [28] V. Ivady, J. Davidsson, N. Delegan, A. L. Falk, P. V. Klimov, S. J. Whiteley, S. O. Hruszkewycz, M. V. Holt, F. J. Heremans, N. T. Son, D. D. Awschalom, I. A. Abrikosov, A. Gali. Nat. Commun., 10, 5607(2019).

    [29] J. F. Wang, Q. Li, F. F. Yan, H. Liu, G. P. Guo, W. P. Zhang, X. Zhou, L. P. Guo, Z. H. Lin, J. M. Cui, X. Y. Xu, J. S. Xu, C. F. Li, G. C. Guo. On-demand generation of single silicon vacancy defect in silicon carbide. ACS Photon., 6, 1736-1743(2019).

    [30] J. F. Wang, F. F. Yan, Q. Li, J. M. Cui, Z. D. Liu, A. Gali, J. S. Xu, C. F. Li, G. C. Guo. Robust coherent control of solid-state spin qubits using anti-Stokes excitation. Nat. Commun., 12, 3223(2021).

    [31] R. Nagy, M. Niethammer, M. Widmann, Y.-C. Chen, P. Udvarhelyi, C. Bonato, J. Ul Hassan, R. Karhu, I. G. Ivanov, N. T. Son, J. R. Maze, T. Ohshima, Ö. O. Soykal, Á. Gali, S.-Y. Lee, F. Kaiser, J. Wrachtrup. High- fidelity spin and optical control of single silicon-vacancy centres in silicon carbide. Nat. Commun., 10, 1954(2019).

    Jun-Feng Wang, Ji-Yang Zhou, Qiang Li, Fei-Fei Yan, Mu Yang, Wu-Xi Lin, Ze-Yan Hao, Zhi-Peng Li, Zheng-Hao Liu, Wei Liu, Kai Sun, Yu Wei, Jian-Shun Tang, Jin-Shi Xu, Chuan-Feng Li, Guang-Can Guo. Optical charge state manipulation of divacancy spins in silicon carbide under resonant excitation[J]. Photonics Research, 2021, 9(9): 1752
    Download Citation