[1] W. F. Koehl, B. B. Buckley, F. J. Heremans, G. Calusine, D. D. Awschalom. Room temperature coherent control of defect spin qubits in silicon carbide. Nature, 479, 84-87(2011).
[2] A. L. Falk, B. B. Buckley, G. Calusine, W. F. Koehl, V. V. Dobrovitski, A. Politi, C. A. Zorman, P. X.-L. Feng, D. D. Awschalom. Polytype control of spin qubits in silicon carbide. Nat. Commun., 4, 1819(2013).
[3] A. Lohrmann, B. C. Johnson, J. C. McCallum, S. Castelletto. A review on single photon sources in silicon carbide. Rep. Prog. Phys., 80, 034502(2017).
[4] J. F. Wang, Y. Zhou, Z. Y. Wang, A. Rasmita, J. Q. Yang, X. J. Li, H. J. von Bardeleben, W. B. Gao. Bright room temperature single photon source at telecom range in cubic silicon carbide. Nat. Commun., 9, 4106(2018).
[5] M. Widmann, S. Y. Lee, T. Rendler, N. T. Son, H. Fedder, S. Paik, L. P. Yang, N. Zhao, S. Yang, I. Booker, A. Denisenko, M. Jamali, S. A. Momenzadeh, I. Gerhardt, T. Ohshima, A. Gali, E. Janzén, J. Wrachtrup. Coherent control of single spins in silicon carbide at room temperature. Nat. Mater., 14, 164-168(2015).
[6] D. J. Christle, A. L. Falk, P. Andrich, P. V. Klimov, J. U. Hassan, N. T. Son, E. Janzén, T. Ohshima, D. D. Awschalom. Isolated electron spins in silicon carbide with millisecond coherence times. Nat. Mater., 14, 160-163(2015).
[7] F. Fuchs, B. Stender, M. Trupke, D. Simin, J. Pflaum, V. Dyakonov, G. V. Astakhov. Engineering near-infrared single-photon emitters with optically active spins in ultrapure silicon carbide. Nat. Commun., 6, 7578(2015).
[8] C. P. Anderson, A. Bourassa, K. C. Miao, G. Wolfowicz, P. J. Mintun, A. L. Crook, H. Abe, J. Ul Hassan, N. T. Son, T. Ohshima, D. D. Awschalom. Electrical and optical control of single spins integrated in scalable semiconductor devices. Science, 366, 1225-1230(2019).
[9] D. J. Christle, P. V. Klimov, C. F. de las Casas, K. Szász, V. Ivády, V. Jokubavicius, J. U. Hassan, M. Syväjärvi, W. F. Koehl, T. Ohshima, N. T. Son, E. Janzén, Á. Gali, D. D. Awschalom. Isolated spin qubits in SiC with a high fidelity infrared spin-to-photon interface. Phys. Rev. X, 7, 021046(2017).
[10] J.-F. Wang, F.-F. Yan, Q. Li, Z.-H. Liu, H. Liu, G.-P. Guo, L.-P. Guo, X. Zhou, J.-M. Cui, J. Wang, Z.-Q. Zhou, X.-Y. Xu, J.-S. Xu, C.-F. Li, G.-C. Guo. Coherent control of nitrogen-vacancy center spins in silicon carbide at room temperature. Phys. Rev. Lett., 124, 223601(2020).
[11] Z. Mu, S. A. Zargaleh, H. J. von Bardeleben, J. E. Fröch, H. Cai, X. Yang, J. Yang, X. Li, I. Aharonovich, W. Gao. Coherent manipulation with resonant excitation and single emitter creation of nitrogen vacancy centers in 4H silicon carbide. Nano Lett., 20, 6142-6147(2020).
[12] Q. Li, J.-F. Wang, F.-F. Yan, J.-Y. Zhou, H.-F. Wang, H. Liu, L.-P. Guo, X. Zhou, A. Gali, Z.-H. Liu, Z.-Q. Wang, K. Sun, G.-P. Guo, J.-S. Tang, J.-S. Xu, C.-F. Li, G.-C. Guo. Room temperature coherent manipulation of single-spin qubits in silicon carbide with high readout contrast(2020).
[13] A. L. Crook, C. P. Anderson, K. C. Miao, A. Bourassa, H. Lee, S. L. Bayliss, D. O. Bracher, X. Zhang, H. Abe, T. Ohshima, E. L. Hu, D. D. Awschalom. Purcell enhancement of a single silicon carbide color center with coherent spin control. Nano Lett., 20, 3427-3434(2020).
[14] A. Bourassa, C. P. Anderson, K. C. Miao, M. Onizhuk, H. Ma, A. L. Crook, H. Abe, J. Ul-Hassan, T. Ohshima, N. T. Son, G. Galli, D. D. Awschalom. Entanglement and control of single nuclear spins in isotopically engineered silicon carbide. Nat. Mater., 19, 1319-1325(2020).
[15] S. J. Whiteley, G. Wolfowicz, C. P. Anderson, A. Bourassa, H. Ma, M. Ye, G. Koolstra, K. J. Satzinger, M. V. Holt, F. J. Heremans, A. N. Cleland, D. I. Schuster, G. Galli, D. D. Awschalom. Spin-phonon interactions in silicon carbide addressed by Gaussian acoustics. Nat. Phys., 15, 490-495(2019).
[16] G. Wolfowicz, S. J. Whiteley, D. D. Awschalom. Electrometry by optical charge conversion of deep defects in 4H-SiC. Proc. Natl. Acad. Sci. USA, 115, 7879-7883(2018).
[17] J.-F. Wang, J.-M. Cui, F.-F. Yan, Q. Li, Z.-D. Cheng, Z.-H. Liu, Z.-H. Liu, J.-S. Xu, C.-F. Li, G.-C. Guo. Optimization of power broadening in optically detected magnetic resonance of defect spins in silicon carbide. Phys. Rev. B, 101, 064102(2020).
[18] Y. Zhou, J. F. Wang, X. M. Zhang, K. Li, J. M. Cai, W. B. Gao. Self-protected thermometry with infrared photons and defect spins in silicon carbide. Phys. Rev. Appl., 8, 044015(2017).
[19] F. F. Yan, J. F. Wang, Q. Li, Z. D. Cheng, J. M. Cui, W. Z. Liu, J. S. Xu, C. F. Li, G. C. Guo. Coherent control of defect spins in silicon carbide above 550 K. Phys. Rev. Appl., 10, 044042(2018).
[20] A. L. Falk, P. V. Klimov, B. B. Buckley, V. Ivády, I. A. Abrikosov, G. Calusine, W. F. Koehl, Á. Gali, D. D. Awschalom. Electrically and mechanically tunable electron spins in silicon carbide color centers. Phys. Rev. Lett., 112, 187601(2014).
[21] P. Siyushev, H. Pinto, M. Vörös, A. Gali, F. Jelezko, J. Wrachtrup. Optically controlled switching of the charge state of a single nitrogen-vacancy center in diamond at cryogenic temperatures. Phys. Rev. Lett., 110, 167402(2013).
[22] D. A. Golter, C. W. Lai. Optical switching of defect charge states in 4H-SiC. Sci. Rep., 7, 13406(2017).
[23] B. Magnusson, N. T. Son, A. Csóré, A. Gällström, T. Ohshima, A. Gali, I. G. Ivanov. Excitation properties of the divacancy in 4H-SiC. Phys. Rev. B, 98, 195202(2018).
[24] G. Wolfowicz, C. P. Anderson, A. L. Yeats, S. J. Whiteley, J. Niklas, O. G. Poluektov, F. J. Heremans, D. D. Awschalom. Optical charge state control of spin defects in 4H-SiC. Nat. Commun., 8, 1876(2017).
[25] M. Bockstedte, F. Schütz, T. Garratt, V. Ivády, A. Gali.
[26] S. A. Zargaleh, H. J. von Bardeleben, J. L. Cantin, U. Gerstmann, S. Hameau, B. Eble, W. Gao. Electron paramagnetic resonance tagged high-resolution excitation spectroscopy of NV-centers in 4H-SiC. Phys. Rev. B, 98, 214113(2018).
[27] K. Khazen, H. J. von Bardeleben, S. A. Zargaleh, J. L. Cantin, M. Zhao, W. B. Gao, T. Biktagirov, U. Gerstmann. High-resolution resonant excitation of NV centers in 6H – SiC: a matrix for quantum technology applications. Phys. Rev. B, 100, 205202(2019).
[28] V. Ivady, J. Davidsson, N. Delegan, A. L. Falk, P. V. Klimov, S. J. Whiteley, S. O. Hruszkewycz, M. V. Holt, F. J. Heremans, N. T. Son, D. D. Awschalom, I. A. Abrikosov, A. Gali. Nat. Commun., 10, 5607(2019).
[29] J. F. Wang, Q. Li, F. F. Yan, H. Liu, G. P. Guo, W. P. Zhang, X. Zhou, L. P. Guo, Z. H. Lin, J. M. Cui, X. Y. Xu, J. S. Xu, C. F. Li, G. C. Guo. On-demand generation of single silicon vacancy defect in silicon carbide. ACS Photon., 6, 1736-1743(2019).
[30] J. F. Wang, F. F. Yan, Q. Li, J. M. Cui, Z. D. Liu, A. Gali, J. S. Xu, C. F. Li, G. C. Guo. Robust coherent control of solid-state spin qubits using anti-Stokes excitation. Nat. Commun., 12, 3223(2021).
[31] R. Nagy, M. Niethammer, M. Widmann, Y.-C. Chen, P. Udvarhelyi, C. Bonato, J. Ul Hassan, R. Karhu, I. G. Ivanov, N. T. Son, J. R. Maze, T. Ohshima, Ö. O. Soykal, Á. Gali, S.-Y. Lee, F. Kaiser, J. Wrachtrup. High- fidelity spin and optical control of single silicon-vacancy centres in silicon carbide. Nat. Commun., 10, 1954(2019).