In this study, Cd1-xZnxTe(x=0.04) crystals were grown using the Te-rich Vertical Bridgman(VB) method. A position-dependent conductivity transition was found in some of the as-grown Cd1-xZnxTe ingots, which caused significant nonuniformity in the Hg1-yCdyTe(MCT) focal plane array(FPA) response map. Cd-rich annealing experiments were performed on Cd1-xZnxTe ingots with position-dependent conductivity transition, and the relationships between the position-dependent conductivity transition and annealing conditions, including annealing time, temperature, and Cd partial pressure, were studied. Furthermore, by understanding the formation mechanism of Cd vacancies and Cd interstitials, we found that Cd vacancies can be reduced during Cd1-xZnxTe ingot growth.