• Journal of Terahertz Science and Electronic Information Technology
  • Vol. 20, Issue 9, 869 (2022)
ZHANG Jinxin1、*, GUO Hongxia2, LYU Ling1, WANG Xin3, and PAN Xiaoyu2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    DOI: 10.11805/tkyda2021439 Cite this Article
    ZHANG Jinxin, GUO Hongxia, LYU Ling, WANG Xin, PAN Xiaoyu. Simulation on key influencing factors of Single Event Effects on SiGe HBT[J]. Journal of Terahertz Science and Electronic Information Technology , 2022, 20(9): 869 Copy Citation Text show less
    References

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    [2] CRESSLER J D. Radiation effects in SiGe technology[J]. IEEE Transactions on Nuclear Science, 2013,60(3):1992-2014.

    [3] CRESSLER J D,NIU G F. Silicon-germanium heterojunction bipolar transistors[M]. Boston London:Artech House, 2003.

    [4] CRESSLER J D. On the potential of SiGe HBTs for extreme environment electronics[J]. Proceedings of the IEEE, 2005,93(9): 1559-1582.

    [5] APPASWAMY A. Operation of inverse mode SiGe HBTs and ultra-scaled CMOS devices in extreme environments[D]. Georgia: Georgia Institute of Technology, 2010.

    [6] WEN J C, SHI R Y, GONG M, et al. Gamma irradiation effects on collector current and early voltage of SiGe heterojunction bipolar transistor[J]. High Power Laser and Particle Beams, 2011,23(2):545-549.

    [7] BANERJE G,NIU G,CRESSLER J D,et al. Anomalous dose rate effects in gamma irradiated SiGe heterojunction bipolar transistors[J]. IEEE Transactions on Nuclear Science, 1999,46(6):1620-1626.

    [8] LIU S H,LIN D S,GUO X Q,et al. Degradation of SiGe HBT with reactor pulse neutron and gamma ray irradiation[J]. Nuclear Instruments and Methods in Physics Research A, 2006,569(3):810-814.

    [9] VARADHARAJAPERUMAL M. 3D simulation of SEU in SiGe HBTS and radiation hardening by design[D]. Alabama:Auburn University, 2010.

    [10] XU Z Y,NIU G F,LUO L,et al. Charge collection and SEU in SiGe HBT current mode logic operating at cryogenic temperatures[J]. IEEE Transactions on Nuclear Science, 2010,57(6):3206-3211.

    [11] XU Z Y,NIU G F,LUO L,et al. Charge collection and SEU in SiGe HBT current mode logic operating at cryogenic temperatures[J]. IEEE Transactions on Nuclear Science, 2010,57(6):3206-3211.

    [12] ZHANG B,YANG Y T,LI Y J,et.al. Electrical behavior research of silicon-on-insulator SiGe heterojunction bipolar tran-sistor[J]. Acta Physica Sinica, 2012,61(23):535-543.

    [13] YANG H. 3D device simulation of SEU-induced charge collection in 200 GHz SiGe HBTs[D]. Alabama: Auburn University, 2005.

    [14] ZHANG J H, GUO H X, GUO Q, et al. 3D simulation of heavy .ion induced charge collection of single event effects in SiGe heterojunction bipolar transistor[J]. Acta Physica Sinica, 2013,62(4):048501.

    [15] ZHANG Jinxin, HE Chaohui, GUO Hongxia, et al. 3D simulation study of single event effects of SiGe heterojunction bipolar transistor in extreme environment[J]. Microelectronics Reliability, 2015(55):1180-1186.

    ZHANG Jinxin, GUO Hongxia, LYU Ling, WANG Xin, PAN Xiaoyu. Simulation on key influencing factors of Single Event Effects on SiGe HBT[J]. Journal of Terahertz Science and Electronic Information Technology , 2022, 20(9): 869
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