• Acta Photonica Sinica
  • Vol. 41, Issue 8, 932 (2012)
WANG Jin-xiang1、*, SHEN Hong-xue2, PENG Xiao-bo2, WANG Yun2, and LIU Yin1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.3788/gzxb20124108.0932 Cite this Article
    WANG Jin-xiang, SHEN Hong-xue, PENG Xiao-bo, WANG Yun, LIU Yin. Fluorescence Emission Properties of N-doped ZnO Films[J]. Acta Photonica Sinica, 2012, 41(8): 932 Copy Citation Text show less
    References

    [1] ROY C, BYTNE S, MCGLYNN E, et al.Correlation of raman and X-ray diffraction measurements of annealed pulsed laser deposited ZnO thin films[J]. Thin Solid Films, 2003, 436: 273-276.

    [2] SONG Yong-liang, JI Zhen-guo, LIU Kun, et al. Influences of processing parameters on the properties of ZnO thin films prepared by sol-gel spin-coating[J]. Acta Physica Sinica, 2004, 53(2): 636-639.

    [3] MAJURNDER S B, JAIN M, DOBAL P S, et al. Investigations on solution derived aluminium doped zinc oxide thin films[J]. Materials Science and Engineering, 2003, B103: 16-25.

    [4] JIANG Xiang-dong, ZHANG Huai-wu, HUANG Xiang-cheng, et al.The research on the transparent and conductive semiconductor ZnO thin film[J]. Journal of Applied Optics, 2002, 2: 35-38.

    [5] SHAN F K, KIM B I, LIU Z F, et al. Substrate effects of ZnO thin films prepared by PLD technique[J]. Applied Physics, 2004, 245(1-4): 414-419.

    [6] MA De-wei, HUANG Jing-yun, YE Zhi-zhen, et al. Zn1-xCdxO thin films prepared by DC reactive magnetron sputtering[J].Optical Materials, 2004, 25(4): 367-371.

    [7] YU R Y R, LEE T S, LEEM J H, et al. Fabrication of homostructural ZnO p-n junctions and ohmic contacts to arsenic-doped p-type ZnO[J]. Applied Physics Letters, 2003, 83(19): 4032-4034.

    [8] BIAN Ji-ming, LI Xiao-min, ZHANG Can-yun, et al. P-type ZnO films by monodoping of nitrogen and ZnO-based p-n homojunctions[J] Applied Physics Letters, 2004, 85(18): 4070-4072.

    [9] TSUKAZAKI A, ONUMA T, OHTANI M, et al. Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO[J]. Nature Materials, 2005, 4: 42-46.

    [10] KANAI Y. Properties of nitrogen-implanted p-type ZnO films by frequency magnetron sputtering[J].Applied Physics, 1991, 30(4): 703-707.

    [11] XU Peng-shou, SUN Yu-ming, SHI Chao-shu, et al.Effects of the electronic structure of ZnO and its defects on the spectral properties [J]. Science in China(A), 2001, 44(9): 1174-1181.

    [12] SHEN Hua, SHI Lin-xing, WANG Qing, et al. Influence of preparation temperature on photoluminescence of amorphous ZnO/TiO2 films[J]. Journal of Applied Optics, 2007, 4: 421-425.

    [13] SONG Qing, HUANG Mei-qian, LI Guan-qi, et al. A study on photosensitivity characteristics of Ba(1-x)SrxNbyTi(1-y)O3 thin film on SiO2/Si substrate[J]. Journal of Applied Optics,2005, 5: 45-49.

    WANG Jin-xiang, SHEN Hong-xue, PENG Xiao-bo, WANG Yun, LIU Yin. Fluorescence Emission Properties of N-doped ZnO Films[J]. Acta Photonica Sinica, 2012, 41(8): 932
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