Under room temperature, ZnSe/Ag/ZnSe transparent conducting film was fabricated by electron beam evaporation based on infrared material ZnSe and metal Ag. The ZnSe/Ag/ZnSe film has the electron density of 1.208×1020 cm－3, the electron mobility of 17.22 cm2V－1s－1, the resistivity of 2.867×10－5 Ω·cm, and the work function is 5.13 eV. The ZnSe/Ag/ZnSe film shows an average visible transmittance of more than 80% by theoretical modeling and 63.8% by measurement. The maximum measured transmittance of 83% can be obtained. The results indicates that ZnSe/Ag/ZnSe film has good optical and electrical properties that can be used as transparent electrode in optoelectronic devices.