• Chinese Journal of Lasers
  • Vol. 33, Issue 9, 1159 (2006)
[in Chinese]*, [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. InAlGaAs Quantum Well 808 nm Laser Diode with Low Threshold Current and High Efficiency[J]. Chinese Journal of Lasers, 2006, 33(9): 1159 Copy Citation Text show less
    References

    [1] P. A. Crump, T. R. Crum, M. DeVito et al.. High efficiency, high power 808-nm laser array and stacked arrays optimized for elevated temperature operation [C]. SPIE, 2004, 5336:144~155

    [2] Won T. Tsang. Chemical beam epitaxy [J]. IEEE Cirsuits and Devices Magazine, 1988, 4(5):18~24

    [6] Shun Lien Chuang. Efficient band-structure calculations of strained quantum wells [J]. Phys. Rev. B, 1991, 43(12):9649~9661

    [8] Y. Kokubo, I. Ohta. Refractive index as a function of photon energy for AlGaAs between 1.2 and 1.8 eV [J]. J. Appl. Phys., 1997, 81(4):2042~2043

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. InAlGaAs Quantum Well 808 nm Laser Diode with Low Threshold Current and High Efficiency[J]. Chinese Journal of Lasers, 2006, 33(9): 1159
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