• Acta Photonica Sinica
  • Vol. 46, Issue 6, 614001 (2017)
WANG Wei*, ZHAI Teng, WANG Hao, TAN Shao-yang, WANG Wei, ZHANG Rui-kang, and JI Chen
Author Affiliations
  • [in Chinese]
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    DOI: 10.3788/gzxb20174606.0614001 Cite this Article
    WANG Wei, ZHAI Teng, WANG Hao, TAN Shao-yang, WANG Wei, ZHANG Rui-kang, JI Chen. High Power 1 060 nm Distributed Feedback Semiconductor Laser with Double-Trench Ridge Waveguide Structure[J]. Acta Photonica Sinica, 2017, 46(6): 614001 Copy Citation Text show less
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    [3] NGUYEN H K, COLEMAN S, VISOVSKY NJ, et al. Reliable high-power 1060 nm DBR lasers for second-harmonic generation[J].Electronics Letters,2007,43(13):716-717.

    [4] HONG K N, HU M H, NISHIYAMA N, et al. 107-mW low-noise green-light emission by frequency doubling of a reliable 1060-nm DFB semiconductor laser diode[J].IEEE Photonics Technology Letters,2006,18(5):682-684.

    [5] DEKKER P, BURNS P A, DAWEs J M, et al. Widely tunable yellow-green lasers based on the self-frequency-doubling material Yb:YAB[J]. Journal of the Optical Society of America B,2003,20(4):706-712.

    [6] HU M H, NGUYEN H K, SONG K C, et al. High-power high-modulation-speed 1060-nm DBR lasers for green-light emission[J].IEEE Photonics Technology Letters,2006,18(1-4):616-618.

    [7] ACHTENHAGEN M. Transverse mode coupling in narrow-ridge waveguide laser diodes[J].Optics Communications, 2006,266(1):172-174.

    [8] PARK K H, LEE K, JANG D H, et al. Kink and beam steering free 0.98μm high-power RWG lasers with partially ion implanted channels[J].Electronics Letters,1998,34(6):562-563.

    [9] PAWLIK S, TRAUT S, THIES A, et al. Ultra-high power RWG laser diodes with lateral absorber region[C].2002 IEEE 18th International Semiconductor Laser Conference Conference Digest, 2002:163-164.

    [10] SWINT R B, YEOH T S, ELARDE V C, et al. Curved waveguides for spatial mode filters in semiconductor lasers[J].IEEE Photonics Technology Letters, 2004,16(1):12-14.

    [11] WENZEL H, BUGGE F, DALLMER M, et al. Fundamental-lateral mode stabilized high-power ridge-waveguide lasers with a low beam divergence[J].IEEE Photonics Technology Letters, 2008,20(3):214-216.

    [12] TAN Shao-yang, ZHAI Teng, ZHANG Rui-kang,et al. Graded doping low internal loss 1060-nm InGaAs/AlGaAs quantum well semiconductor lasers[J].Chinese Physics B, 2015,24(6):374-377.

    [13] ZHAI Teng, TAN Shao-yang, LU Dan,et al. High power 1060 nm distributed feedback semiconductor laser[J].Chinese Physics Letters, 2014,31(2):52-54.

    [14] VAIL E C, NABIEV R F, CHANG-HASNAIN C J. Temperature dependence of light-current characteristics of 0.98-μm Al-free strained-quantum-well lasers[J].IEEE Photonics Technology Letters, 1994,6(11):1303-1305.

    WANG Wei, ZHAI Teng, WANG Hao, TAN Shao-yang, WANG Wei, ZHANG Rui-kang, JI Chen. High Power 1 060 nm Distributed Feedback Semiconductor Laser with Double-Trench Ridge Waveguide Structure[J]. Acta Photonica Sinica, 2017, 46(6): 614001
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