• Chinese Journal of Lasers
  • Vol. 45, Issue 10, 1001004 (2018)
Wang Juan1、2, Huang Haizhou1、2, Huang Jianhong1, Chen Jinming1, Deng Jing1, Weng Wen1, Dai Shutao1、2, Wu Hongchun1, and Lin Wenxiong1、*
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.3788/cjl201845.1001004 Cite this Article Set citation alerts
    Wang Juan, Huang Haizhou, Huang Jianhong, Chen Jinming, Deng Jing, Weng Wen, Dai Shutao, Wu Hongchun, Lin Wenxiong. 784.9 nm and 808 nm Laser Diode Pumped Tm/Ho Bonded Laser[J]. Chinese Journal of Lasers, 2018, 45(10): 1001004 Copy Citation Text show less

    Abstract

    784.9 nm and 808 nm laser diode (LD) pump Tm/Ho bonded laser is studied at room temperature. The gain medium is a Tm/Ho∶YAG bonded crystal formed by diffusion-bonding of Tm∶YAG and Ho∶YAG crystals. The Ho laser properties pumped by the two LDs are compared, including output power, beam quality, and wavelength. At low pump absorption power, the efficiency of laser pumped by 808 nm LD is slightly lower than that of the 784.9 nm LD, which verifies the wide applicability of the new laser realization mechanism based on Tm/Ho bonded gain medium in pump wavelength selection. Using 784.9 nm LD, the maximum output power of 1.89 W is obtained at room temperature, with an optical conversion efficiency of 26.4% and a slope efficiency of 40.78%. Using 808 nm LD, the maximum output power of 1.74 W is obtained at room temperature with an optical conversion efficiency and a slope efficiency of 24.4% and 40.31%, respectively. Under the two pump conditions, the laser wavelength corresponding to the maximum output power is near 2122 nm.
    Wang Juan, Huang Haizhou, Huang Jianhong, Chen Jinming, Deng Jing, Weng Wen, Dai Shutao, Wu Hongchun, Lin Wenxiong. 784.9 nm and 808 nm Laser Diode Pumped Tm/Ho Bonded Laser[J]. Chinese Journal of Lasers, 2018, 45(10): 1001004
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