Author Affiliations
1Department of Basic Education, Fuyang Institute of Technology, Fuyang 236031, China2Department of Physiology and Biophysics, School of Life Sciences, Fudan University, Shanghai 200438, China3School of Mathematics and Statistics, Chifeng University, Chifeng 024000, Chinashow less
Fig. 1. Spiketrains and PRC of the ML model when I = 45.5 µA·cm–2, A = 1.65 µA·cm–2, and d = 4.4 ms: (a) Square pulse disturbance current (dashed line), and spike trains without (dotted line) and with square pulse disturbance (solid line); (b) PRC.
当I = 45.5 µA·cm–2, 方波脉冲幅值A = 1.65 µA·cm–2, 宽度d = 4.4 ms时, ML模型的放电序列和PRC (a) 方波脉冲刺激电流(短划线)、没有方波脉冲的放电(点线)和有方波脉冲的放电(实线); (b) PRC
Fig. 2. (a) Bifurcation of ML model with respect to I; (b) spike trains of ML model when I = 45.5 µA·cm–2; (c) resting state of ML model when I = 44 µA·cm–2; (d) the changes of ISIs (solid line) and frequency (dashed line) with respect to I.
(a) ML模型随I的平衡点分岔; (b) 当I = 45.5 µA·cm–2时, ML模型的放电序列图; (c) 当I = 44 µA·cm–2时, ML模型处于静息状态; (d) ISIs和频率随I的变化(实线表示ISIs, 虚线表示频率)
Fig. 3. Spike trains induced by square pulse current applied at different phases when I = 45.5 µA·cm–2. The spike trains (solid line) influenced by negative square pulse current (dashed line) and the trains (red dotted line) without negative square pulse current. (a) ts = 22 ms, A = –0.6 µA·cm –2, d = 4.9 ms; (b) ts = 22 ms, A = –1.65 µA·cm –2, d = 4.8 ms; (c) ts = 40 ms, A = –0.6 µA·cm –2, d = 4.9 ms; (d) ts = 40 ms, A = –1.65 µA·cm –2, d = 4.8 ms.
当I = 45.5 µA·cm–2时, 负向方波脉冲电流(虚线)作用在不同相位的放电序列(实线)和无方波脉冲作用的放电序列(红色的点线) (a) ts = 22 ms, A = –0.6 µA·cm –2, d = 4.9 ms; (b) ts = 22 ms, A = –1.65 µA·cm –2, d = 4.8 ms; (c) ts = 40 ms, A = –0.6 µA·cm –2, d = 4.9 ms; (d) ts = 40 ms, A = –1.65 µA·cm –2, d = 4.8 ms
Fig. 4. PRC induced by negative square pulse current near the Hopf bifurcation point in the ML model when I = 45.5 µA·cm–2: (a) A = –0.6 µA·cm –2, d = 4.9 ms; (b) A = –1.65 µA·cm –2, d = 4.8 ms.
当I = 45.5 µA·cm–2时, ML模型在Hopf分岔点附近的负向脉冲刺激诱发的PRC (a) A = –0.6 µA·cm –2, d = 4.9 ms; (b) A = –1.65 µA·cm –2, d = 4.8 ms
Fig. 5. Inhibitory autapse current (dashed line) and spike trains (solid line) of the ML model with inhibitory autapse when I = 45.5 µA·cm–2 and gaut = 0.04 mS·cm–2: (a) τ = 0 mS; (b) τ = 10 mS; (c) τ = 20 mS; (d) τ = 30 mS; (e) τ = 40 mS; (f) τ =50 mS.
当I = 45.5 µA·cm–2, gaut = 0.04 mS·cm–2, 具有抑制性自突触ML模型的放电模式(实线)与抑制性自突触电流(短划线) (a) τ = 0 mS; (b) τ = 10 mS; (c) τ =20 mS; (d) τ = 30 mS; (e) τ = 40 mS; (f) τ =50 mS
Fig. 6. Change of normalized ISIs(boldsolid line) and firing frequency (thin solid line) with respect to time delay τ: (a) gaut = 0.01 mS·cm–2; (b) gaut = 0.04 mS·cm–2.
不同耦合强度gaut下归一化的ISIs (粗实线)和放电频率(细实线)随时滞τ的变化 (a) gaut = 0.01 mS·cm–2; (b) gaut = 0.04 mS·cm–2
Fig. 7. Dependence of average ISIs on time delay τ and coupling strength gaut when D = 0.5 µA·cm–2.
当噪声强度D = 0.5 µA·cm–2时, 平均ISIs对时滞τ和耦合强度gaut的依赖关系
Fig. 8. (a) Dependence of standard deviation of ISIs(STD) on time delay τ and coupling strength gaut; (b) the dependence of coefficient of variation of ISIs(CV) on delay τ and coupling strength gaut. The parameter values are I = 45.5 µA·cm–2 and D = 0.5 µA·cm–2.
当I = 45.5 µA·cm–2, D = 0.5 µA·cm–2时, (a) ISIs的STD对时滞τ和耦合强度gaut的依赖关系, (b) ISIs的CV对时滞τ和耦合强度gaut的依赖关系
Fig. 9. Changes of coefficient of variation (CV) of ISIs with respect to coupling strength gaut when time delay τ is fixed at different values: (a) τ = 27 ms; (b) τ = 30 ms; (c) τ = 40 ms; (d) τ = 46 ms.
固定时滞τ在不同水平下, ISIs的CV随着耦合强度gaut的变化 (a) τ = 27 ms; (b) τ = 30 ms; (c) τ = 40 ms; (d) τ = 46 ms
Fig. 10. Changes of coefficient of variation (CV) of ISIs with respect to time delay τ when coupling strength gaut is fixed at different levels: (a) gaut = 0.31 mS·cm–2; (b) gaut = 0.61 mS·cm–2.
固定耦合强度gaut在不同水平下, ISIs的变异系数CV随着时滞τ的变化 (a) gaut = 0.31 mS·cm–2; (b) gaut = 0.61 mS·cm–2
Fig. 11. Effect of time delay τ on spike-timing precision of neuron model when I = 45.5 µA·cm–2, D = 0.5 µA·cm–2, and gaut = 0.61 mS·cm–2: (a) τ = 1 ms; (b) τ = 10 ms; (c) τ = 30 ms; (d) τ = 50 ms.
当I = 45.5 µA·cm–2, D = 0.5 µA·cm–2, 耦合强度gaut = 0.61 mS·cm–2时, 时滞τ对神经元模型的精确放电的影响 (a) τ = 1 ms; (b) τ = 10 ms; (c) τ = 30 ms; (d) τ = 50 ms