[1] Kenji Nomura,Hiromichi Ohta,Kazushige Ueda et al.. Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor [J]. Science,2003,300(5623):1269-1272

[2] Kenji Nomura,Hiromichi Ohta,Akihiro Takagi et al.. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors [J]. Nature,2004,432(7016):488-492

[3] Yujiro Takedaa,Kenji Nomurab,Hiromichi Ohta et al.. Growth of epitaxial ZnO thin films on lattice-matched buffer layer:Application of InGaO3(ZnO)6 single-crystalline thin film [J]. Thin Solid Films,2005,486(1-2):28-32

[4] Lingfei Ji,Yijian Jiang,Wei Wang et al.. Enhancement of the dielectric permittivity of Ta2O5 ceramics by CO2 laser irradiation [J]. Appl. Phys. Lett.,2004,85(9):1577-1579

[5] Hisato Yabuta,Masafumi Sano,Katsumi Abe et al.. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering [J]. Appl. Phys. Lett.,2006,89(11):112123

[6] In-Keun Jeong,Hong-Lee Parkb,Sun-il Mhoa et al.. Photoluminescence of ZnGa2O4 mixed with InGaZnO4[J]. Solid State Commun.,1998,108(11):823-826

[7] Arun Suresh,Praveen Gollakota,Patrick Wellenius et al.. Transparent,high mobility InGaZnO thin films deposited by PLD [J]. Thin Solid Films,2008,516(7):1326-1329

[8] Zhang Ninglin,Song Zhitang,Xing Su et al.. Investigations on the relations between crystal structure and electrical properties of ZrO2 thin films [J]. Chinese J. Laser,2003,30(4):345-348

[9] Zhang Long,Zhu Jian,Zhuo Min. Fire process and performance analysis of high-intensity Ba0.6Sr0.4TiO3 target [J]. J. Functional Materials and Devices,2008,14(2):358-361

[10] Ranjan K. Sahu,R. D. Vispute,S. Dhar et al.. Enhanced conductivity of pulsed laser deposited n-InGaZn6O9 films and its rectifying characteristics with p-SiC [J]. Thin Solid Films,2009,517(5):1829-1832

[11] X. Y. Zhang,A. Dhawan,P. Wellenius et al.. Planar ZnO ultraviolet modulator [J]. Appl. Phys. Lett.,2007,91(7):071107

[12] Yang Yifa,Long Hua,Yang Guang et al.. Effect of temperature on structure and properties of femtosecond laser deposited silicon based zinc oxide thin films [J]. Chinese J. Laser,2007,34(9):1282-1286

[13] J. Tauc,R. Grigorovici,A. Vancu. Optical properties and electronic structure of amorphous germanium [J]. Phys. Status Solidi (b),1966,15(2):627-637

[14] Liu Enke,Zhu Bingsheng,Luo Jinsheng et al.. Semiconductor Physics [M]. Beijing:Publishing House of Electronics Industry,2008. 373