• Chinese Journal of Lasers
  • Vol. 29, Issue 12, 1061 (2002)
[in Chinese]1、*, [in Chinese]2, and [in Chinese]1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • show less
    DOI: Cite this Article Set citation alerts
    [in Chinese], [in Chinese], [in Chinese]. 940 nm Aluminum-free Two-quantum-well Array Semiconductor Laser[J]. Chinese Journal of Lasers, 2002, 29(12): 1061 Copy Citation Text show less

    Abstract

    The factors which influence the ultimate output power of semiconductor laser are analyzed. The aluminum-free two-quantum-well semiconductor laser which wavelength is 940 nm is made by MOCVD. As a result, the peak wavelength of the aluminum-free two-quantum-well semiconductor laser is 940 2 nm, the full-width-half-maximum (FWHM) is 2 nm, the continuous output power is 10 W, and the incremental efficiency is 1 09 W/A.
    [in Chinese], [in Chinese], [in Chinese]. 940 nm Aluminum-free Two-quantum-well Array Semiconductor Laser[J]. Chinese Journal of Lasers, 2002, 29(12): 1061
    Download Citation