• Chinese Journal of Lasers
  • Vol. 41, Issue 6, 617001 (2014)
Zang Zhigang1、2、3、*, Yu Jianhui1、2, Zhang Jun1、2、3, and Chen Zhe1、2、3
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    DOI: 10.3788/cjl201441.0617001 Cite this Article Set citation alerts
    Zang Zhigang, Yu Jianhui, Zhang Jun, Chen Zhe. Enhanced Output Power of InGaN Superluminescent Diode Using Active Multi-Mode Interferometer[J]. Chinese Journal of Lasers, 2014, 41(6): 617001 Copy Citation Text show less

    Abstract

    To improve the output power of InGaN superluminescent diodes (SLED), an active multimode-interferometer (Active-MMI) configuration has been used to fabricate the Active-MMI SLED. Because of the wider actively pumped area, the output power saturation level has been improved. The experiment results show that the maximum output power of Active-MMI SLED as high as 47 mW is obtained with a wide 3 dB bandwidth of 20 nm and flat spectrum. Moreover, even under the maximum output power of Active-MMI SLED, it still keeps a stable single mode output.
    Zang Zhigang, Yu Jianhui, Zhang Jun, Chen Zhe. Enhanced Output Power of InGaN Superluminescent Diode Using Active Multi-Mode Interferometer[J]. Chinese Journal of Lasers, 2014, 41(6): 617001
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