Optical bistabilities in ZnSe/ZnS multiple quantum wells at low temperature

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Journal of Lasers >Volume 17 >Issue 9 >Page 549 > Article

Chinese Journal of Lasers
Vol. 17, Issue 9, 549 (1990)

Optical bistabilities in ZnSe/ZnS multiple quantum wells at low temperature

[in Chinese]¹, [in Chinese]¹, [in Chinese]², [in Chinese]², [in Chinese]², and [in Chinese]²

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¹[in Chinese]

²[in Chinese]

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Optical bistabilities in ZnSe/ZnS multiple quantum wells at low temperature[J]. Chinese Journal of Lasers, 1990, 17(9): 549 Copy Citation Text

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Abstract

Excitonic absorption and the excitonic band broadening are observed in ZnSe /ZnS multiple quantum wells at 77K, and the increasing absorption and dispersive optical bistabilities are obtained at different excitation wavelengths. The nonlinear mechanism is the excitonic band broadening.

Keywords

multiple quantum wells optical bistability

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