• Acta Photonica Sinica
  • Vol. 40, Issue 7, 1008 (2011)
CHEN Liang1、2、*, QIAN Yunsheng1, and CHANG Benkang1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.3788/gzxb20114007.1008 Cite this Article
    CHEN Liang, QIAN Yunsheng, CHANG Benkang. Reflection on Surface Photovoltage Spectroscopy for Transmissionmode GaAs Photocathodes of Different Active Layer Thickness[J]. Acta Photonica Sinica, 2011, 40(7): 1008 Copy Citation Text show less
    References

    [1] DU XiaoQing,ZONG ZhiYuan,CHANG BenKang.Spectral response measurement and analysis of stability for GaAs photocathode[J]. Acta Photonica Sinica,2004,33(8):939941.

    [2] DU YuJie,DU XiaoQing,ChANG BenKang,et al.Spectral response performance of transmissionmode GaAs photocathode in activation[J]. Acta Photonica Sinica,2005,34(12):17921794.

    [3] ZOU JiJun,CHANG BenKang,et al.The effect of Cs/O Activation current ratio on GaAs photocathode[J].Acta Photonica Sinica,2006,35(10):14931496.

    [4] ZOU JiJun,GAO Pin,YANG Zhi,et al.Influence of activelayer thickness on reflectionmode GaAs photocathode[J].Acta Photonica Sinica,2008,37(6):11121115.

    [5] YANG Zhi,ZOU JiJun,NIU Jun,et al.Research on high temperature Cs activated GaAs photocathode [J].Spectroscopy and Spectral Analysis,2010,30(8):20382042.

    [6] MA JianYi,SUN Jian.Investigation on transmission mode GaAs photocathode[J].Optoelectronic Technology,2010,30(2):7679.

    [7] NIU Jun,ZHANG YiJun,CHANG BenKang, et al.Influence of exponential doping structure on the performance of GaAs photocathodes[J].Applied Optics,2009,48(29):54455449.

    [8] ZHANG YiJun,CHANG BenKang,YANG Zhi et al.Distribution of carriers in gradientdoping transmissionmode GaAs photocathodes grown by molecular beam epitaxy[J].Chinese Physics B,2009,18(10):45414545.

    [9] ZOU JiJun,CHANG BenKang,YANG Zhi,et al.Evolution of photocurrent during cordsorption of Cs and O on GaAs (100)[J].Chinese Physics Letters,2007,24(6):17311735.

    [10] YANG Zhi,CHANG BenKang,ZOU JiJun,et al.Comparison between gradientdoping GaAs photocathode and uniformdoping GaAs photocathode[J]. Applied Optics,2007,46(28):70357040.

    [11] ZENG YiPing,CAO X.High quality metamophic HEMT grown on GaAs substrates by MBE[J].J Cryst Growth, 2001,210:227228.

    [12] IVANOV T S,DONCHEV V,GERMANOVA K,et al.A vector model for analysing the surface photovoltage amplitude and phase spectra applied to complicated nanostructures[J]. J Phys D:Appl Phys, 2009,42(13):53025306.

    [13] IVANOV T S,DONCHEV V,ANGELOVA T,et al.Characterizations of multilayer InAs/InP quantum wires by surface photovoltage and photoluminescence spectroscopies[J].J Phys:Conf Ser,2010,253(01):20432048.

    [14] DONCHEV V,IVANOV T S,ANGELOVA T,et al.Surface photovoltage and photoluminescence spectroscopy of selfassembled InAs/InP quantum wires[J].J Phys:Conf Ser,2010,210(01):20412048.

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    CHEN Liang, QIAN Yunsheng, CHANG Benkang. Reflection on Surface Photovoltage Spectroscopy for Transmissionmode GaAs Photocathodes of Different Active Layer Thickness[J]. Acta Photonica Sinica, 2011, 40(7): 1008
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