Passively mode-locked grown-together composite YVO4/Nd:YVO4 crystal laser with a semiconductor saturable absorber mirror under 880-nm direct pumping

Fangqin Li; Nan Zong; Zhichao Wang; Lin Han; Yong Bo; Qinjun Peng; Dafu Cui; Zuyan Xu

doi:10.3788/COL201109.041405

Journals >Chinese Optics Letters >Volume 9 >Issue 4 >Page 041405 > Article

Chinese Optics Letters
Vol. 9, Issue 4, 041405 (2011)

Passively mode-locked grown-together composite YVO4/Nd:YVO4 crystal laser with a semiconductor saturable absorber mirror under 880-nm direct pumping

Fangqin Li^1,2,3, Nan Zong¹, Zhichao Wang^1,3, Lin Han¹..., Yong Bo¹, Qinjun Peng¹, Dafu Cui¹ and Zuyan Xu¹|Show fewer author(s)

Author Affiliations

¹Research Center of Laser Physics and Technology, Key Laboratory of Functional Crystal and Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China

²Key Laboratory of Optical Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

³Graduate University of the Chinese Academy of Sciences, Beijing 100049, China

show less

DOI: 10.3788/COL201109.041405 Cite this Article Set citation alerts

Fangqin Li, Nan Zong, Zhichao Wang, Lin Han, Yong Bo, Qinjun Peng, Dafu Cui, Zuyan Xu, "Passively mode-locked grown-together composite YVO4/Nd:YVO4 crystal laser with a semiconductor saturable absorber mirror under 880-nm direct pumping," Chin. Opt. Lett. 9, 041405 (2011) Copy Citation Text

show less

Abstract

A passively mode-locked grown-together composite YVO4/Nd:YVO4 crystal laser is demonstrated with a semiconductor saturable absorber mirror by 880-nm laser-diode direct pumping. Under the absorbed pump power of 24.9 W, a maximum output power of 10.5 W at the repetition rate of 77 MHz is obtained, corresponding to the optical-optical conversion efficiency of 42.1% and the slope efficiency of 53.4%. The pulse width measured is 33 ps at the output power of 10 W.

Keywords

140.3480 140.3580 140.4050 160.3380