• Optoelectronic Technology
  • Vol. 41, Issue 1, 70 (2021)
Yanmei LUO, Zhoushuo CHU, Jian WANG, Ke HU, and Botao SUN
Author Affiliations
  • [in Chinese]
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    DOI: 10.19453/j.cnki.1005-488x.2021.01.013 Cite this Article
    Yanmei LUO, Zhoushuo CHU, Jian WANG, Ke HU, Botao SUN. Research Progress of a⁃IGZO TFT Based on Dual⁃active Layer[J]. Optoelectronic Technology, 2021, 41(1): 70 Copy Citation Text show less
    Structure of dual-active layer IGZO-TFT
    Fig. 1. Structure of dual-active layer IGZO-TFT
    The interaction between active layer's surface and etching medium
    Fig. 2. The interaction between active layer's surface and etching medium
    Stucture and process of a-IGZO TFT
    Fig. 3. Stucture and process of a-IGZO TFT
    The comparison of Vth and SS with different thicknesses of IZO
    Fig. 4. The comparison of Vth and SS with different thicknesses of IZO
    Schematic of Vth shift of single active layer and double active layer under bias test
    Fig. 5. Schematic of Vth shift of single active layer and double active layer under bias test
    测试条件单层Vth双层Vth
    PBT2.48 V1.26 V
    NPT-6.46 V-3.31 V
    Table 1. The results of PBT and NBT
    氧含量/(%)µ /(cm2·V-1·s-1)Vth /VIon/Ioff (105)
    072.6-0.70.005
    338.10.30.06
    79.61.40.3
    1010.41.02
    123.91.71
    155.71.51
    Table 2. The electrical performance of a⁃IGZO TFTs with different percentage of oxygen