• Acta Physica Sinica
  • Vol. 69, Issue 13, 137701-1 (2020)
Jun-Dong Chen1,2, Wei-Hua Han1,2,*, Chong Yang1,2, Xiao-Song Zhao1,2..., Yang-Yan Guo1,2, Xiao-Di Zhang1,2 and Fu-Hua Yang1,2,*|Show fewer author(s)
Author Affiliations
  • 1Engineering Research Center of Semiconductor Integrated Technology, Beijing Engineering Research Center of Semiconductor Micro-Nano Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • show less
    DOI: 10.7498/aps.69.20200354 Cite this Article
    Jun-Dong Chen, Wei-Hua Han, Chong Yang, Xiao-Song Zhao, Yang-Yan Guo, Xiao-Di Zhang, Fu-Hua Yang. Recent research progress of ferroelectric negative capacitance field effect transistors[J]. Acta Physica Sinica, 2020, 69(13): 137701-1 Copy Citation Text show less
    Roadmap of subthreshold swing (SS) proposed by IRDS[8].
    Fig. 1. Roadmap of subthreshold swing (SS) proposed by IRDS[8].
    The schematic diagram of the classification of dielectrics.
    Fig. 2. The schematic diagram of the classification of dielectrics.
    Ferroelectric hysteresis loop[41].
    Fig. 3. Ferroelectric hysteresis loop[41].
    Chemical and crystal structures of the metal-free A(NH4) X3 family[56]: (a) Chemical structures of constituents of the metal-free 3D perovskite ferroelectrics; (b) the packing diagram of MDABCO–NH4I3 in the ferroelectric phase at 293 K. The oval to the right contains the space-fill diagram of the organic cation, showing the cationic geometry to be close to a ball; (c) the packing diagram of MDABCO–NH4I3 in the paraelectric phase at 463 K.
    Fig. 4. Chemical and crystal structures of the metal-free A(NH4) X3 family[56]: (a) Chemical structures of constituents of the metal-free 3D perovskite ferroelectrics; (b) the packing diagram of MDABCO–NH4I3 in the ferroelectric phase at 293 K. The oval to the right contains the space-fill diagram of the organic cation, showing the cationic geometry to be close to a ball; (c) the packing diagram of MDABCO–NH4I3 in the paraelectric phase at 463 K.
    The transfer characteristic curve of field effect transistors.
    Fig. 5. The transfer characteristic curve of field effect transistors.
    The schematic diagram of a standard field effect transistors.structure and its eauivalent circuit of capacitance[73].
    Fig. 6. The schematic diagram of a standard field effect transistors.structure and its eauivalent circuit of capacitance[73].
    Device structure diagram: (a) Traditional MOSFETs; (b) MFIS; (c) MFMIS.
    Fig. 7. Device structure diagram: (a) Traditional MOSFETs; (b) MFIS; (c) MFMIS.
    (a) Conventional unit cell of an FE perovskite (ABO3)[85]; (b) schematic of the dipole fields in the (200) plane[85].
    Fig. 8. (a) Conventional unit cell of an FE perovskite (ABO3)[85]; (b) schematic of the dipole fields in the (200) plane[85].
    The relationship between polarization P and electric field E of ferroelectrics: (a) P vs. E; (b) hysteresis diagram.
    Fig. 9. The relationship between polarization P and electric field E of ferroelectrics: (a) P vs. E; (b) hysteresis diagram.
    (a) QFE vs. VFE of ferroelectrics; (b) UFE vs. QFE of ferroelectrics.
    Fig. 10. (a) QFE vs. VFE of ferroelectrics; (b) UFE vs. QFE of ferroelectrics.
    Energy landscapes of CFE, CDE and their series combination[90].
    Fig. 11. Energy landscapes of CFE, CDE and their series combination[90].
    Ferroelectric NC measured by small-signal measurement mode: (a) Equivalent circuit diagram[91]; (b) schematic diagram of a LAO/BSTO superlattice stack[90]; (c) capacitance dependence on voltage[90].
    Fig. 12. Ferroelectric NC measured by small-signal measurement mode: (a) Equivalent circuit diagram[91]; (b) schematic diagram of a LAO/BSTO superlattice stack[90]; (c) capacitance dependence on voltage[90].
    The schematic of a R-CFE circuit for studying the transient NC in ferroelectrics[99].
    Fig. 13. The schematic of a R-CFE circuit for studying the transient NC in ferroelectrics[99].
    The simulation results of transient NC[99]: (a) Input voltage, output voltage, and free charge on a ferroelectric capacitor as functions of time; (b) polarization and free charge as functions of time; (c) charge density per unit time for free charge and polarization and the difference between them; (d) change in the voltage across a ferroelectric capacitor per unit time as a function of time.
    Fig. 14. The simulation results of transient NC[99]: (a) Input voltage, output voltage, and free charge on a ferroelectric capacitor as functions of time; (b) polarization and free charge as functions of time; (c) charge density per unit time for free charge and polarization and the difference between them; (d) change in the voltage across a ferroelectric capacitor per unit time as a function of time.
    (a) The effect of the external resistance on transient NC in a R-CFE circuit; (b)the effect of the viscosity coefficient on transient NC in a R-CFE circuit[99].
    Fig. 15. (a) The effect of the external resistance on transient NC in a R-CFE circuit; (b)the effect of the viscosity coefficient on transient NC in a R-CFE circuit[99].
    The relationship between capacitive charge and voltage of the device: (a) Capacitance model; (b) ; (c) (d) Fe-NCFETs[91]; (e) Fe-FETs[91].
    Fig. 16. The relationship between capacitive charge and voltage of the device: (a) Capacitance model; (b) ; (c) (d) Fe-NCFETs[91]; (e) Fe-FETs[91].
    Planar Silicon based HfAlO Fe-NCFETs[116]: (a) HR TEM cross-section image; (b) polarization as a function of nitrogen content of TaN; (c) schematic band diagram of HfAlO before and after F-passivation; (d) SS as a function of VDS after different treatments.
    Fig. 17. Planar Silicon based HfAlO Fe-NCFETs[116]: (a) HR TEM cross-section image; (b) polarization as a function of nitrogen content of TaN; (c) schematic band diagram of HfAlO before and after F-passivation; (d) SS as a function of VDS after different treatments.
    Silicon based NC-FinFET[123]: (a) TEM cross-sectional image of NC-FinFET with TiN internal gate, HfZrO FE film and TiN gate; (b) the gate amplification coefficient as a function of VG for NC-FinFET; (c) SS as a function of VG for conventional FinFET and NC-FinFET.
    Fig. 18. Silicon based NC-FinFET[123]: (a) TEM cross-sectional image of NC-FinFET with TiN internal gate, HfZrO FE film and TiN gate; (b) the gate amplification coefficient as a function of VG for NC-FinFET; (c) SS as a function of VG for conventional FinFET and NC-FinFET.
    (a) TEM cross-sectional image of silicon based NC-p-FinFET[124]; (b) IDS as a function of gate length[124].
    Fig. 19. (a) TEM cross-sectional image of silicon based NC-p-FinFET[124]; (b) IDS as a function of gate length[124].
    Two-layer stacked silicon nanowire GAA Fe-NCFETs[126] : (a) TEM cross-sectional image of the device; (b) HRTEM of a portion of the channel; (c) the GIXRD spectrum for the as-deposited HZO layer.
    Fig. 20. Two-layer stacked silicon nanowire GAA Fe-NCFETs[126] : (a) TEM cross-sectional image of the device; (b) HRTEM of a portion of the channel; (c) the GIXRD spectrum for the as-deposited HZO layer.
    Germanium based HZO NC-pFET[129]: (a) Schematic diagram of the device with Ge channel; (b) schematic diagram of the device with Ge-Sn channel; (c) transfer characteristic curve of the device with Ge channel; (d) transfer characteristic curve of the device with Ge-Sn channel.
    Fig. 21. Germanium based HZO NC-pFET[129]: (a) Schematic diagram of the device with Ge channel; (b) schematic diagram of the device with Ge-Sn channel; (c) transfer characteristic curve of the device with Ge channel; (d) transfer characteristic curve of the device with Ge-Sn channel.
    Germanium nanowire NC-pFET[135]: (a) The transfer characteristic curve at different sweep times for ±5 V sweep range; (b) hysteresis versus sweep time for ±5 V sweep range; (c) maximum drain current versus sweep time for different sweep ranges.
    Fig. 22. Germanium nanowire NC-pFET[135]: (a) The transfer characteristic curve at different sweep times for ±5 V sweep range; (b) hysteresis versus sweep time for ±5 V sweep range; (c) maximum drain current versus sweep time for different sweep ranges.
    In0.53Ga0.47As channel Fe-NCFETs: (a) Schematic diagram[136] and (c) transfer characteristic curve of planar device[136]; (b) schematic diagram[137] and (d) transfer characteristic curve of Fin device[137].
    Fig. 23. In0.53Ga0.47As channel Fe-NCFETs: (a) Schematic diagram[136] and (c) transfer characteristic curve of planar device[136]; (b) schematic diagram[137] and (d) transfer characteristic curve of Fin device[137].
    Carbon nanotube Fe-NCFETs[138]: (a) TEM cross-sectional image; (b) Pr vs. E; (c) the transfer characteristic curve; (d) IGS as a function of VGS.
    Fig. 24. Carbon nanotube Fe-NCFETs[138]: (a) TEM cross-sectional image; (b) Pr vs. E; (c) the transfer characteristic curve; (d) IGS as a function of VGS.
    MoS2 Fe-NCFETs[145]: (a) Structure of the device; (b)transfer characteristic curve of VG = ± 7 V; (c)transfer characteristic curve of VG = ± 10 V.
    Fig. 25. MoS2 Fe-NCFETs[145]: (a) Structure of the device; (b)transfer characteristic curve of VG = ± 7 V; (c)transfer characteristic curve of VG = ± 10 V.
    WSe2 Fe-NCFETs[140]: (a) Structure of MFIS device; (b) structure of MFMIS device; (c) transfer characteristic curve of MFIS device; (d) transfer characteristic curve of MFMIS device.
    Fig. 26. WSe2 Fe-NCFETs[140]: (a) Structure of MFIS device; (b) structure of MFMIS device; (c) transfer characteristic curve of MFIS device; (d) transfer characteristic curve of MFMIS device.
    Graphene-HfxAlyO2 transistor[154]: (a) HfxAlyo2 films deposited on graphene/SiO2 substrates; (b) relative dielectric constant of HfxAlyO2; (c) energy difference among three phases in HfxAlyO2 with different Al concentrations; (d) transfer characteristic curve.
    Fig. 27. Graphene-HfxAlyO2 transistor[154]: (a) HfxAlyo2 films deposited on graphene/SiO2 substrates; (b) relative dielectric constant of HfxAlyO2; (c) energy difference among three phases in HfxAlyO2 with different Al concentrations; (d) transfer characteristic curve.
    Black phosphorus Fe-NCFETs[155]: (a) Structure of the device; (b) transfer characteristic curve; (c) SS in different Id.
    Fig. 28. Black phosphorus Fe-NCFETs[155]: (a) Structure of the device; (b) transfer characteristic curve; (c) SS in different Id.
    SS versus Hysteresis of the reported Fe-NCFETs (2D[30,33,108,140,144,146-148,155], Si[25,116,118,119,121,123-126], GeSn[129,130,134,156], InGaAs[136,137]).
    Fig. 29. SS versus Hysteresis of the reported Fe-NCFETs (2D[30,33,108,140,144,146-148,155], Si[25,116,118,119,121,123-126], GeSn[129,130,134,156], InGaAs[136,137]).
    MOS structureChannel materialsGate structureFerroelectric materialstFE/nm SSmin/ (mV·dec–1) Hysteresis/VOrders of IDSVD/V ION/IOFFYearRef.
    Planarp-SiMFISHf0.65Zr0.35O2305–0.51042014[115]
    Planarn-SiMFISHfAlO (Al: 6%)10Sub-250.0240.21082017[116]
    Planarn-SiMFISHf0.75Zr0.25O21040Free10.21072018[119]
    Planarn-SiMFISHf0.53Zr0.47O25~40~0.120.21072019[121]
    Planarn-SiMFISHfAlO (Al: 4%)10Sub-300.0240.21082019[118]
    FinFETn-SiMFISHf0.5Zr0.5O24Sub-300.00320.051072018[25]
    FinFETn-SiMFMISHf0.42Zr0.58O25580.00310.11052015[123]
    FinFETn-SiMFISHf0.5Zr0.5O25Sub-60Free0.11072019[125]
    FinFETp-SiMFMISHf0.42Zr0.58O2334.50.0092–0.051042019[124]
    FinFETn-SiMFISHf0.5Zr0.5O25Sub-60Free0.11072019[125]
    GAApoly n-SiMFISHf0.5Zr0.5O21026.840.00340.11082019[126]
    Planarp-GeMFMISHf0.5Zr0.5O26.5432.341–0.051032016[129]
    Planarp-GeSnMFMISHf0.5Zr0.5O26.5400.412–0.051032016[129]
    Planarp-GeSnMFMISHf0.5Zr0.5O26Sub-20< 0.012–0.051042017[130]
    Planarp-GeMFMISHf0.5Zr0.5O24.5~87.5Free–0.051032019[156]
    Planarp-GeMFISHf0.67Zr0.33O27~125~0.105–0.51042019[134]
    Planarn-InGaAsMFISHf0.5Zr0.5O2823~0.230.051052018[136]
    FinFETn-InGaAsMFISHf0.5Zr0.5O25230.210.051032019[137]
    GAAnanotubeMFMISHfAlO(Al: 7%)10~450.051042018[138]
    2D-FETMoS2MFMISHf1-xZrxO215Sub-601.230.51052017[146]
    2D-FETMoS2MFMISHf0.5Zr0.5O2156.070.540.51052017[33]
    2D-FETMoS2MFMISHfAlO(Al:7.3%)10570.540.51052017[108]
    2D-FETMoS2MFMISHfZrOx15472.510.11062018[30]
    2D-FETMoS2MFISHf0.5Zr0.5O220Sub-60< 0.00540.51062018[147]
    2D-FETMoS2MFISHf0.5Zr0.5O220230.07760.11092017[144]
    2D-FETWSe2MFMISHf0.5Zr0.5O22014.40.122–0.11052018[140]
    2D-FETWSe2MFISHf0.5Zr0.5O21018.20.024–0.11042018[148]
    2D-FETGrapheneMFSHfAlO(Al:9.5%)50.12.752016[154]
    2D-FETBPMFMISHf0.5Zr0.5O2201040.50.11022019[155]
    Table 1. [in Chinese]
    Jun-Dong Chen, Wei-Hua Han, Chong Yang, Xiao-Song Zhao, Yang-Yan Guo, Xiao-Di Zhang, Fu-Hua Yang. Recent research progress of ferroelectric negative capacitance field effect transistors[J]. Acta Physica Sinica, 2020, 69(13): 137701-1
    Download Citation