Jun-Dong Chen, Wei-Hua Han, Chong Yang, Xiao-Song Zhao, Yang-Yan Guo, Xiao-Di Zhang, Fu-Hua Yang. Recent research progress of ferroelectric negative capacitance field effect transistors [J]. Acta Physica Sinica, 2020, 69(13): 137701-1

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- Acta Physica Sinica
- Vol. 69, Issue 13, 137701-1 (2020)
![Roadmap of subthreshold swing (SS) proposed by IRDS[8].](/richHtml/wlxb/2020/69/13/20200354/img_1.jpg)
Fig. 1. Roadmap of subthreshold swing (SS) proposed by IRDS[8].

Fig. 2. The schematic diagram of the classification of dielectrics.
![Ferroelectric hysteresis loop[41].](/Images/icon/loading.gif)
Fig. 3. Ferroelectric hysteresis loop[41].
![Chemical and crystal structures of the metal-free A(NH4) X3 family[56]: (a) Chemical structures of constituents of the metal-free 3D perovskite ferroelectrics; (b) the packing diagram of MDABCO–NH4I3 in the ferroelectric phase at 293 K. The oval to the right contains the space-fill diagram of the organic cation, showing the cationic geometry to be close to a ball; (c) the packing diagram of MDABCO–NH4I3 in the paraelectric phase at 463 K.](/Images/icon/loading.gif)
Fig. 4. Chemical and crystal structures of the metal-free A(NH4) X3 family[56]: (a) Chemical structures of constituents of the metal-free 3D perovskite ferroelectrics; (b) the packing diagram of MDABCO–NH4I3 in the ferroelectric phase at 293 K. The oval to the right contains the space-fill diagram of the organic cation, showing the cationic geometry to be close to a ball; (c) the packing diagram of MDABCO–NH4I3 in the paraelectric phase at 463 K.

Fig. 5. The transfer characteristic curve of field effect transistors.
![The schematic diagram of a standard field effect transistors.structure and its eauivalent circuit of capacitance[73].](/Images/icon/loading.gif)
Fig. 6. The schematic diagram of a standard field effect transistors.structure and its eauivalent circuit of capacitance[73].

Fig. 7. Device structure diagram: (a) Traditional MOSFETs; (b) MFIS; (c) MFMIS.
![(a) Conventional unit cell of an FE perovskite (ABO3)[85]; (b) schematic of the dipole fields in the (200) plane[85].](/Images/icon/loading.gif)
Fig. 8. (a) Conventional unit cell of an FE perovskite (ABO3)[85]; (b) schematic of the dipole fields in the (200) plane[85].

Fig. 9. The relationship between polarization P and electric field E of ferroelectrics: (a) P vs. E ; (b) hysteresis diagram.

Fig. 10. (a) Q FE vs. V FE of ferroelectrics; (b) U FE vs. Q FE of ferroelectrics.
![Energy landscapes of CFE, CDE and their series combination[90].](/Images/icon/loading.gif)
![Ferroelectric NC measured by small-signal measurement mode: (a) Equivalent circuit diagram[91]; (b) schematic diagram of a LAO/BSTO superlattice stack[90]; (c) capacitance dependence on voltage[90].](/Images/icon/loading.gif)
Fig. 12. Ferroelectric NC measured by small-signal measurement mode: (a) Equivalent circuit diagram[91]; (b) schematic diagram of a LAO/BSTO superlattice stack[90]; (c) capacitance dependence on voltage[90].
![The schematic of a R-CFE circuit for studying the transient NC in ferroelectrics[99].](/Images/icon/loading.gif)
![The simulation results of transient NC[99]: (a) Input voltage, output voltage, and free charge on a ferroelectric capacitor as functions of time; (b) polarization and free charge as functions of time; (c) charge density per unit time for free charge and polarization and the difference between them; (d) change in the voltage across a ferroelectric capacitor per unit time as a function of time.](/Images/icon/loading.gif)
Fig. 14. The simulation results of transient NC[99]: (a) Input voltage, output voltage, and free charge on a ferroelectric capacitor as functions of time; (b) polarization and free charge as functions of time; (c) charge density per unit time for free charge and polarization and the difference between them; (d) change in the voltage across a ferroelectric capacitor per unit time as a function of time.
![(a) The effect of the external resistance on transient NC in a R-CFE circuit; (b)the effect of the viscosity coefficient on transient NC in a R-CFE circuit[99].](/Images/icon/loading.gif)
Fig. 15. (a) The effect of the external resistance on transient NC in a R -C FE circuit; (b)the effect of the viscosity coefficient on transient NC in a R -C FE circuit[99].
![The relationship between capacitive charge and voltage of the device: (a) Capacitance model; (b) ; (c) (d) Fe-NCFETs[91]; (e) Fe-FETs[91].](/Images/icon/loading.gif)
Fig. 16. The relationship between capacitive charge and voltage of the device: (a) Capacitance model; (b)
; (c)
(d) Fe-NCFETs[91]; (e) Fe-FETs[91].


![Planar Silicon based HfAlO Fe-NCFETs[116]: (a) HR TEM cross-section image; (b) polarization as a function of nitrogen content of TaN; (c) schematic band diagram of HfAlO before and after F-passivation; (d) SS as a function of VDS after different treatments.](/Images/icon/loading.gif)
Fig. 17. Planar Silicon based HfAlO Fe-NCFETs[116]: (a) HR TEM cross-section image; (b) polarization as a function of nitrogen content of TaN; (c) schematic band diagram of HfAlO before and after F-passivation; (d) SS as a function of V DS after different treatments.
![Silicon based NC-FinFET[123]: (a) TEM cross-sectional image of NC-FinFET with TiN internal gate, HfZrO FE film and TiN gate; (b) the gate amplification coefficient as a function of VG for NC-FinFET; (c) SS as a function of VG for conventional FinFET and NC-FinFET.](/Images/icon/loading.gif)
Fig. 18. Silicon based NC-FinFET[123]: (a) TEM cross-sectional image of NC-FinFET with TiN internal gate, HfZrO FE film and TiN gate; (b) the gate amplification coefficient as a function of V G for NC-FinFET; (c) SS as a function of V G for conventional FinFET and NC-FinFET.
![(a) TEM cross-sectional image of silicon based NC-p-FinFET[124]; (b) IDS as a function of gate length[124].](/Images/icon/loading.gif)
Fig. 19. (a) TEM cross-sectional image of silicon based NC-p-FinFET[124]; (b) I DS as a function of gate length[124].
![Two-layer stacked silicon nanowire GAA Fe-NCFETs[126] : (a) TEM cross-sectional image of the device; (b) HRTEM of a portion of the channel; (c) the GIXRD spectrum for the as-deposited HZO layer.](/Images/icon/loading.gif)
Fig. 20. Two-layer stacked silicon nanowire GAA Fe-NCFETs[126] : (a) TEM cross-sectional image of the device; (b) HRTEM of a portion of the channel; (c) the GIXRD spectrum for the as-deposited HZO layer.
![Germanium based HZO NC-pFET[129]: (a) Schematic diagram of the device with Ge channel; (b) schematic diagram of the device with Ge-Sn channel; (c) transfer characteristic curve of the device with Ge channel; (d) transfer characteristic curve of the device with Ge-Sn channel.](/Images/icon/loading.gif)
Fig. 21. Germanium based HZO NC-pFET[129]: (a) Schematic diagram of the device with Ge channel; (b) schematic diagram of the device with Ge-Sn channel; (c) transfer characteristic curve of the device with Ge channel; (d) transfer characteristic curve of the device with Ge-Sn channel.
![Germanium nanowire NC-pFET[135]: (a) The transfer characteristic curve at different sweep times for ±5 V sweep range; (b) hysteresis versus sweep time for ±5 V sweep range; (c) maximum drain current versus sweep time for different sweep ranges.](/Images/icon/loading.gif)
Fig. 22. Germanium nanowire NC-pFET[135]: (a) The transfer characteristic curve at different sweep times for ±5 V sweep range; (b) hysteresis versus sweep time for ±5 V sweep range; (c) maximum drain current versus sweep time for different sweep ranges.
![In0.53Ga0.47As channel Fe-NCFETs: (a) Schematic diagram[136] and (c) transfer characteristic curve of planar device[136]; (b) schematic diagram[137] and (d) transfer characteristic curve of Fin device[137].](/Images/icon/loading.gif)
Fig. 23. In0.53Ga0.47As channel Fe-NCFETs: (a) Schematic diagram[136] and (c) transfer characteristic curve of planar device[136]; (b) schematic diagram[137] and (d) transfer characteristic curve of Fin device[137].
![Carbon nanotube Fe-NCFETs[138]: (a) TEM cross-sectional image; (b) Pr vs. E; (c) the transfer characteristic curve; (d) IGS as a function of VGS.](/Images/icon/loading.gif)
Fig. 24. Carbon nanotube Fe-NCFETs[138]: (a) TEM cross-sectional image; (b) P r vs. E ; (c) the transfer characteristic curve; (d) I GS as a function of V GS.
![MoS2 Fe-NCFETs[145]: (a) Structure of the device; (b)transfer characteristic curve of VG = ± 7 V; (c)transfer characteristic curve of VG = ± 10 V.](/Images/icon/loading.gif)
Fig. 25. MoS2 Fe-NCFETs[145]: (a) Structure of the device; (b)transfer characteristic curve of V G = ± 7 V; (c)transfer characteristic curve of V G = ± 10 V.
![WSe2 Fe-NCFETs[140]: (a) Structure of MFIS device; (b) structure of MFMIS device; (c) transfer characteristic curve of MFIS device; (d) transfer characteristic curve of MFMIS device.](/Images/icon/loading.gif)
Fig. 26. WSe2 Fe-NCFETs[140]: (a) Structure of MFIS device; (b) structure of MFMIS device; (c) transfer characteristic curve of MFIS device; (d) transfer characteristic curve of MFMIS device.
![Graphene-HfxAlyO2 transistor[154]: (a) HfxAlyo2 films deposited on graphene/SiO2 substrates; (b) relative dielectric constant of HfxAlyO2; (c) energy difference among three phases in HfxAlyO2 with different Al concentrations; (d) transfer characteristic curve.](/Images/icon/loading.gif)
Fig. 27. Graphene-Hfx Aly O2 transistor[154]: (a) Hfx Aly o2 films deposited on graphene/SiO2 substrates; (b) relative dielectric constant of Hfx Aly O2; (c) energy difference among three phases in Hfx Aly O2 with different Al concentrations; (d) transfer characteristic curve.
![Black phosphorus Fe-NCFETs[155]: (a) Structure of the device; (b) transfer characteristic curve; (c) SS in different Id.](/Images/icon/loading.gif)
Fig. 28. Black phosphorus Fe-NCFETs[155]: (a) Structure of the device; (b) transfer characteristic curve; (c) SS in different I d.
![SS versus Hysteresis of the reported Fe-NCFETs (2D[30,33,108,140,144,146-148,155], Si[25,116,118,119,121,123-126], GeSn[129,130,134,156], InGaAs[136,137]).](/Images/icon/loading.gif)
Fig. 29. SS versus Hysteresis of the reported Fe-NCFETs (2D[30,33,108,140,144,146-148,155], Si[25,116,118,119,121,123-126], GeSn[129,130,134,156], InGaAs[136,137]).
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Table 1. [in Chinese]
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