[7] Swarbrick , P [J]. Br. J. Appl. Phys., 18, 419(1967).
[8] Gleizes A, Chervy B, Gonzalez J J[J]. J. Phys. D-Appl. Phys., 32, 2060(1999).
[9] Girard R, Belhaouari J B, Gonzalez J J, Gleizes A[J]. J. Phys. D-Appl. Phys., 32, 2890(1999).
[12] Van Brunt R J, Herron J T[J]. IEEE Trans. Electr. Insul., 25, 75(1990).
[13] Van Brunt R J, Herron J T[J]. Phys. Scr., 1994, 9(1994).
[16] Vacquie S, Gleizes A, Kafrouni H[J]. J. Phys. D-Appl. Phys., 18, 2193(1985).
[17] Xu J Y, Wang Q P[J]. High Voltage Apparatus, 1987, 9(1987).
[18] Lin X, Li X T, Xu J Y, Shan C W[J]. Proc. Chin. Soc. Elect. Eng., 36, 301(2016).
[21] Liu Y F, Ding Y J, Peng Z M, Huang Y, Du Y J[J]. Acta Phys. Sin., 63, 205205(2014).
[23] Wang F M, Lin X, Xu J Y[J]. High Voltage Engineering, 40, 3073(2014).
[24] Liu J H, Lu J Z, Lei J J, Gao X, Lin J Q[J]. Acta Phys. Sin., 69, 057401(2020).
[25] Dong L F, Ran J X, Mao Z G[J]. Acta Phys. Sin., 54, 2167(2005).
[26] Pagano , C , Hafeez , S , Lunney , J G[J]. J. Phys. D-Appl. Phys., 42, 155205(2009).