Current-voltage characteristics simulation and analysis of 4H-SiC metal-semiconductor-metal ultraviolet photodetectors

Junqin Zhang; Yintang Yang; Lifei Lou; Yan Zhao

doi:10.3788/COL20080608.0615

Journals >Chinese Optics Letters >Volume 6 >Issue 8 >Page 615 > Article

Chinese Optics Letters
Vol. 6, Issue 8, 615 (2008)

Current-voltage characteristics simulation and analysis of 4H-SiC metal-semiconductor-metal ultraviolet photodetectors

Junqin Zhang, Yintang Yang, Lifei Lou, and Yan Zhao

Author Affiliations

School of Microelectronics, Xidian University, Key Lab of Ministry of Education for Wide Bandgap Semiconductor Materials and Devices, Xi'an 710071

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DOI: 10.3788/COL20080608.0615 Cite this Article Set citation alerts

Junqin Zhang, Yintang Yang, Lifei Lou, Yan Zhao. Current-voltage characteristics simulation and analysis of 4H-SiC metal-semiconductor-metal ultraviolet photodetectors[J]. Chinese Optics Letters, 2008, 6(8): 615 Copy Citation Text

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