The results of simultaneous-mode 128×128 MW/LW two-color HgCdTe Infrared detector was presented in this paper. The photoresist (PR) spray-coating technology was developed to open the windows of non-planar implantation and metallization of two-color HgCdTe infrared detector. By etching to expose the n-type implantation-region of MW photodiodes, non-planar B+-implantation of MW photodiodes and LW photodiodes synchronously, side-wall passivation, side-wall metallization and flip-chip hybridization with Readout Integrated Circuit (ROIC), 128×128 MW/LW two-color HgCdTe Infrared detector was achieved from a triple-layer p3-p2-P1 hetero-junction Hg1-xCdxTe film grown by molecular beam epitaxy. At liquid nitrogen temperature, the cut-off wavelengths of the simultaneous-mode MW/LW two-color Infrared detector were 5.1μm and 10.1 μm individually, and the peak detectivities (Dλp*) were 2.02×1011 cmHz1/2/W and 3.10×1010 cmHz1/2/W respectively. Also the spectral cross-talks of MW-to-LW and LW-to-MW were suppressed to only 3.8% and 4.4% by optimizing the chip structure of the simultaneous-mode two-color infrared detector.