Infrared detection technology plays a key role in many important fields, such as satellite reconnaissance, military guidance, astronomical observation, medical detection, and modern communications. Type-II superlattices, as a new generation of infrared detection materials after HgCdTe detectors, have unique advantages in terms of stability, manufacturability, and cost. The barrier-type InAs/InAsSb type-II superlattice infrared detectors are one of the most promising type-II superlattice infrared detectors. Their key performance has been steadily improved in recent years but is still constrained by factors such as low absorption coefficient, difficult heteroepitaxial growth, and large dark current. Herein, this article reviews the development history of III-V type-II superlattices, analyzes the different barrier structures, key properties and development trends of barrier-type InAs/InAsSb type-II superlattice infrared detectors, and points out the potential key problems and future development directions of barrier type InAs/InAsSb type-II superlattice infrared detectors.