[in Chinese]; [in Chinese]

Journals >Chinese Journal of Lasers >Volume 11 >Issue 3 >Page 187 > Article

Chinese Journal of Lasers
Vol. 11, Issue 3, 187 (1984)

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[in Chinese], [in Chinese]. [J]. Chinese Journal of Lasers, 1984, 11(3): 187 Copy Citation Text

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Abstract

In this paper, we report the study of Ohmic contact of p-GaAs andp-InP using sputtered Ti/Pt film. Ohmic contacts are very stable in the temperature range of 300-500℃ for alloying. The lifetime of the GaAs/GaAlAs laser made by this method has exceeded 6000 hours.

[in Chinese], [in Chinese]. [J]. Chinese Journal of Lasers, 1984, 11(3): 187

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