Bao-Jun Zhang, Fang Wang, Jia-Qiang Shen, Xin Shan, Xi-Chao Di, Kai Hu, Kai-Liang Zhang. Effect analysis and magnetoelectric properties of hydrogen in Co-doped MoSe2 Co-growth [J]. Acta Physica Sinica, 2020, 69(4): 048101-1
- Acta Physica Sinica
- Vol. 69, Issue 4, 048101-1 (2020)
Fig. 1. Schematic illustration for Chemical vapor deposition in situ co-growth of cobalt-doped MoSe2.
Fig. 2. OM of Co-doped MoSe2 under different H2 flow rates.
Fig. 3. Topographic measurements under different H2 flow rates: (a)−(d) Topography; (e)−(h) profile line along the red dash line.
Fig. 4. (a) EDS spectrum of doped Co MoSe2; (b) EDS mapping of Co doped MoSe2; (c−e) XPS contrast spectra of MoSe2 and cobalt-doped MoSe2: (c) Co2p core level region, (d) Mo3d core level region and (e) Se3d core level region, respectively.
Fig. 5. (a) Raman and (b) PL spectra of MoSe2 and Co-doped MoSe2; (c) raman mapping of MoSe2 (238 cm–1); (d) raman mapping Co-doped MoSe2 (235 cm–1).
Fig. 6. VSM of (a) MoSe2 and (b) Co doped MoSe2 with different Co3O4 use level.
Fig. 7. Typical transfer characteristics of (a) undoped MoSe2 and (b) Co doped MoSe2 FETs device with semilog scale.
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