• Journal of Synthetic Crystals
  • Vol. 54, Issue 4, 717 (2025)
QI Zhanguo1, WANG Shouzhi1,2,*, LI Qiubo1, WANG Zhongxin1..., SHAO Huihui1, LIU Lei1, WANG Guodong1, SUN Defu1, YU Huidong1, JIANG Kaize1, ZHANG Shuang1, CHEN Xiufang1, XU Xiangang1 and ZHANG Lei1,2|Show fewer author(s)
Author Affiliations
  • 1State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, Shandong University, Jinan 250100, China
  • 2Shandong Crystal GaN Semiconductor Co., Ltd., Jinan 250100, China
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    DOI: 10.16553/j.cnki.issn1000-985x.2025.4001 Cite this Article
    QI Zhanguo, WANG Shouzhi, LI Qiubo, WANG Zhongxin, SHAO Huihui, LIU Lei, WANG Guodong, SUN Defu, YU Huidong, JIANG Kaize, ZHANG Shuang, CHEN Xiufang, XU Xiangang, ZHANG Lei. Preparation of 4-Inch High-Quality GaN Single Crystal Substrates[J]. Journal of Synthetic Crystals, 2025, 54(4): 717 Copy Citation Text show less
    References

    [1] HARIMA H. Properties of GaN and related compounds studied by means of Raman scattering[J]. Journal of Physics: Condensed Matter, 2002, 14(38): R967-R993.

    [5] SUN D F, LIU L, WANG G D, et al. Research progress in liquid phase growth of GaN crystals[J]. Chemistry-A European Journal, 2024, 30(17): e202303710.

    [6] WANG B F, LIU L, TIAN G, et al. Studying the effect of temperature and pressure on GaN crystalsviathe Na-flux method[J]. CrystEngComm, 2024, 26(24): 3176-3184.

    [8] ZHANG L, DAI Y B, WU Y Z, et al. Epitaxial growth of a self-separated GaN crystal by using a novel high temperature annealing porous template[J]. CrystEngComm, 2014, 16(38): 9063-9068.

    [9] LIU L, ZHANG X, WANG S Z, et al. Nucleation mechanism of GaN crystal growth on porous GaN/sapphire substrates[J]. CrystEngComm, 2022, 24(10): 1840-1848.

    [10] YU H D, WANG G D, WANG S Z, et al. Application of multiphoton photoluminescence in characterization of GaN dislocations[J]. Journal of Materials Science: Materials in Electronics, 2024, 35(20): 1431.

    [11] WANG Z X, WANG S Z, LIU L, et al. Growth of freestanding GaN crystals on three-dimensional mesh porous substrates by HVPE[J]. CrystEngComm, 2024, 26(38): 5415-5420.

    [12] YU H D, WANG G D, WANG S Z, et al. The influence of the interaction mechanism between impurities and point defects on the yellow luminescence band of GaN[J]. Vacuum, 2025, 234: 114127.

    QI Zhanguo, WANG Shouzhi, LI Qiubo, WANG Zhongxin, SHAO Huihui, LIU Lei, WANG Guodong, SUN Defu, YU Huidong, JIANG Kaize, ZHANG Shuang, CHEN Xiufang, XU Xiangang, ZHANG Lei. Preparation of 4-Inch High-Quality GaN Single Crystal Substrates[J]. Journal of Synthetic Crystals, 2025, 54(4): 717
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