[1] C. G. B. Garrett, W. Kaiser, W. L. Bond. Stimulated emission into optical whispering gallery modes of spheres. Phys. Rev., 124, 1807-1809(1961).

[2] A. F. J. Levi, R. E. Slusher, S. L. McCall, T. Tanbuk-Ek, D. L. Coblentz, S. J. Perton. Room temperature operation of microdisc lasers with submilliamp threshold current. Electron. Lett., 28, 1010-1012(1992).

[3] J. Hofrichter, O. Raz, S. Keyvaninia, T. de Vries, H. J. S. Dorren, T. Morf, B. J. Offrein. High-speed direct-modulation of InP microdisk lasers. 39th European Conference and Exhibition on Optical Communication (ECOC), We.1.B.5(2013).

[4] X. M. Lv, Y. Z. Huang, L. X. Zou, H. Long, Y. Du. Optimization of direct modulation rate for circular microlasers by adjusting mode Q factor. Laser Photon. Rev., 7, 818-829(2013).

[5] L.-X. Zou, Y.-Z. Huang, B.-W. Liu, X.-M. Lv, X.-W. Ma, Y.-D. Yang, J.-L. Xiao, Y. Du. Thermal and high speed modulation characteristics for AlGaInAs/InP microdisk lasers. Opt. Express, 23, 2879-2888(2015).

[6] A. K. Sokol, R. P. Sarzala. Comparative analysis of thermal problems in GaAs- and InP-based 1.3-μm VECSELs. Opt. Appl., 43, 325-341(2013).

[7] N. V. Kryzhanovskaya, M. V. Maximov, S. A. Blokhin, M. A. Bobrov, M. M. Kulagina, S. I. Troshkov, Y. M. Zadiranov, A. A. Lipovskii, E. I. Moiseev, Y. V. Kudashova, D. A. Livshits, V. M. Ustinov, A. E. Zhukov. Microdisk injection lasers for the 1.27-μm spectral range. Semiconductors, 50, 390-393(2016).

[8] T. Kageyama, K. Nishi, M. Yamaguchi, R. Mochida, Y. Maeda, K. Takemasa, Y. Tanaka, T. Yamamoto, M. Sugawara, Y. Arakawa. Extremely high temperature (220°C) continuous-wave operation of 1300-nm-range quantum-dot lasers. Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference (CLEO/EQEC), PDA_1(2011).

[9] M. Ishida, N. Hatori, K. Otsubo, T. Yamamoto, Y. Nakata, H. Ebe, M. Sugawara, Y. Arakawa. Low-driving-current temperature-stable 10 Gbit/s operation of p-doped 1.3  μm quantum dot lasers between 20 and 90°C. Electron. Lett., 43, 219-221(2007).

[10] L. Zhang, E. Hu. Lasing from InGaAs quantum dots in an injection microdisk. Appl. Phys. Lett., 82, 319-321(2003).

[11] M. Munsch, J. Claudon, N. S. Malik, K. Gilbert, P. Grosse, J.-M. Gerard, F. Albert, F. Langer, T. Schlereth, M. M. Pieczarka, S. Hofling, M. Kamp, A. Forchel, S. Reitzenstein. Room temperature, continuous wave lasing in microcylinder and microring quantum dot laser diodes. Appl. Phys. Lett., 100, 031111(2012).

[12] N. V. Kryzhanovskaya, E. I. Moiseev, Y. V. Kudashova, F. I. Zubov, A. A. Lipovskii, M. M. Kulagina, S. I. Troshkov, Y. M. Zadiranov, D. A. Livshits, M. V. Maximov, A. E. Zhukov. Continuous-wave lasing at 100°C in 1.3  μm quantum dot microdisk diode laser. Electron. Lett., 51, 1354-1355(2015).

[13] A. Fiore, M. Rossetti, B. Alloing, C. Paranthoen, J. X. Chen, L. Geelhaar, H. Riechert. Carrier diffusion in low-dimensional semiconductors: a comparison of quantum wells, disordered quantum wells, and quantum dots. Phys. Rev. B, 70, 205311(2004).

[14] D. Ouyang, N. N. Ledentsov, D. Bimberg, A. R. Kovsh, A. E. Zhukov, S. S. Mikhrin, V. M. Ustinov. High performance narrow stripe quantum-dot lasers with etched waveguide. Semicond. Sci. Technol., 18, L53-L54(2003).

[15] Y. Wan, J. Norman, Q. Li, M. J. Kennedy, D. Liang, C. Zhang, D. Huang, Z. Zhang, A. Y. Liu, A. Torres, D. Jung, A. C. Gossard, E. L. Hu, K. M. Lau, J. E. Bowers. 1.3  μm submilliamp threshold quantum dot micro-lasers on Si. Optica, 4, 940-944(2017).

[16] N. V. Kryzhanovskaya, E. I. Moiseev, Y. S. Polubavkina, M. V. Maximov, D. V. Mokhov, I. A. Morozov, M. M. Kulagina, Y. M. Zadiranov, A. A. Lipovskii, M. Tang, M. Liao, J. Wu, S. Chen, H. Liu, A. E. Zhukov. Elevated temperature lasing from injection microdisk lasers on silicon. Laser Phys. Lett., 15, 015802(2018).

[17] Y. Wan, D. Inoue, D. Jung, J. C. Norman, C. Shang, A. C. Gossard, J. E. Bowers. Directly modulated quantum dot lasers on silicon with a milliampere threshold and high temperature stability. Photon. Res., 6, 776-781(2018).

[18] M. V. Maximov, N. V. Kryzhanovskaya, A. M. Nadtochiy, E. I. Moiseev, I. I. Shostak, A. A. Bogdanov, Z. F. Sadrieva, A. E. Zhukov, A. A. Lipovskii, D. V. Karpov, J. Laukkanen, J. Tommila. Ultrasmall microdisk and microring lasers based on InAs/InGaAs/GaAs quantum dots. Nanoscale Res. Lett., 9, 657(2014).

[19] F. Grillot, B. Dagens, J.-G. Provost, H. Su, L. F. Lester. Gain compression and above-threshold linewidth enhancement factor in 1.3-μm InAs-GaAs quantum-dot lasers. IEEE J. Quantum Electron., 44, 946-951(2008).

[20] D.-Y. Cong, A. Martinez, K. Merghem, A. Ramdane, J.-G. Provost, M. Fischer, I. Krestnikov, A. Kovsh. Temperature insensitive linewidth enhancement factor of p-type doped InAs/GaAs quantum-dot lasers emitting at 1.3  μm. Appl. Phys. Lett., 92, 191109(2008).

[21] A. E. Zhukov, M. V. Maximov, N. Y. Gordeev, A. V. Savelyev, D. A. Livshits, A. R. Kovsh. Quantum dot lasers with controllable spectral and modal characteristics. Semicond. Sci. Technol., 26, 014004(2011).

[22] S. A. Mintairov, N. A. Kalyuzhnyy, M. V. Maximov, A. M. Nadtochiy, S. Rouvimov, A. E. Zhukov. GaAs quantum well-dots solar cells with spectral response extended to 1100  nm. Electron. Lett., 51, 1602-1604(2015).

[23] S. A. Mintairov, N. A. Kalyuzhnyy, M. V. Maximov, A. M. Nadtochiy, A. E. Zhukov. InGaAs quantum well-dots based GaAs subcell with enhanced photocurrent for multijunction GaInP/GaAs/Ge solar cells. Semicond. Sci. Technol., 32, 015006(2017).

[24] S. A. Mintairov, N. A. Kalyuzhnyy, V. M. Lantratov, M. V. Maximov, A. M. Nadtochiy, S. Rouvimov, A. E. Zhukov. Hybrid InGaAs quantum well-dots nanostructures for light-emitting and photo-voltaic applications. Nanotechnology, 26, 385202(2015).

[25] E. Moiseev, N. Kryzhanovskaya, M. Maximov, F. Zubov, A. Nadtochiy, M. Kulagina, Y. Zadiranov, N. Kalyuzhnyy, S. Mintairov, A. Zhukov. Highly efficient injection microdisk lasers based on quantum well-dots. Opt. Lett., 43, 4554-4557(2018).

[26] P. Jaffrennou, J. Claudon, M. Bazin, N. S. Malik, S. Reitzenstein, L. Worschech, M. Kamp, A. Forchel, J.-M. Gerard. Whispering gallery mode lasing in high quality GaAs/AlAs pillar microcavities. Appl. Phys. Lett., 96, 071103(2010).

[27] L. A. Coldren, S. W. Corzine, M. L. Masanovic. Diode Lasers and Photonic Integrated Circuits(2012).

[28] X. M. Lv, Y. Z. Huang, Y. D. Yang, L. X. Zou, H. Long, B. W. Liu, J. L. Xiao, Y. Du. Influences of carrier diffusion and radial mode field pattern on high speed characteristics for microring lasers. Appl. Phys. Lett., 104, 161101(2014).

[29] H. Su, L. F. Lester. Dynamic properties of quantum dot distributed feedback lasers: high speed, linewidth and chirp. J. Phys. D, 38, 2112-2118(2005).

[30] E. Kapon. Semiconductor Lasers: Fundamentals(1999).

[31] P. Bhattacharya, D. Klotzkin, O. Qasaimeh, W. Zhou, S. Krishna, D. Zhu. High-speed modulation and switching characteristics of In(Ga)As-Al(Ga)As self-organized quantum-dot lasers. IEEE J. Sel. Top. Quantum Electron., 6, 426-438(2000).

[32] M. Ishida, N. Hatori, T. Akiyama, K. Otsubo, Y. Nakata, H. Ebe, M. Sugawara, Y. Arakawa. Photon lifetime dependence of modulation efficiency and K factor in 1.3  μm self-assembled InAs/GaAs quantum-dot lasers: Impact of capture time and maximum modal gain on modulation bandwidth. Appl. Phys. Lett., 85, 4145-4147(2004).

[33] A. Fiore, A. Markus. Differential gain and gain compression in quantum-dot lasers. IEEE J. Quantum Electron., 43, 287-294(2007).

[34] A. N. AL-Omari, I. K. AL-Kofahi, K. L. Lear. Fabrication, performance and parasitic parameter extraction of 850  nm high-speed vertical-cavity lasers. Semicond. Sci. Technol., 24, 095024(2009).

[35] Q. H. Song. Emerging opportunities for ultra-high Q whispering gallery mode microcavities. Sci. China: Phys. Mech. Astron., 62, 074231(2019).