• Journal of Synthetic Crystals
  • Vol. 53, Issue 9, 1494 (2024)
CHEN Fengwu, LYU Wenli, GONG Xin, XUE Yong, and GONG Xiaoliang
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  • [in Chinese]
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    DOI: Cite this Article
    CHEN Fengwu, LYU Wenli, GONG Xin, XUE Yong, GONG Xiaoliang. Progress and Prospect of Molecular Beam Epitaxy Equipment at Home and Abroad[J]. Journal of Synthetic Crystals, 2024, 53(9): 1494 Copy Citation Text show less
    References

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    [2] FOXON C T. Three decades of molecular beam epitaxy[J]. Journal of Crystal Growth, 2003, 251(1/2/3/4): 1-8.

    [4] ROGERS T J. Molecular beam epitaxy in a high-volume GaAs fab[J]. Journal of Crystal Growth, 2009, 311(7): 1671-1675.

    [6] JGER R, RIEDL M C. MBE growth of VCSELs for high volume applications[J]. Journal of Crystal Growth, 2011, 323(1): 434-437.

    [7] LEVINE B F, SACKS R N, KO J, et al. A new planar InGaAs-InAlAs avalanche photodiode[J]. IEEE Photonics Technology Letters, 2006, 18(18): 1898-1900.

    [8] ZHANG Y G, GU Y, ZHU C, et al. Gas source MBE grown wavelength extended 2.2 and 2.5 μm InGaAs PIN photodetectors[J]. Infrared Physics & Technology, 2006, 47(3): 257-262.

    [9] FASTENAU J M, LIU W K, FANG X M, et al. Commercial production of QWIP wafers by molecular beam epitaxy[J]. Infrared Physics and Technology, 2001, 42(3/4/5): 407-415.

    [11] PETERSON J M, FRANKLIN J A, REDDY M, et al. High-quality large-area MBE HgCdTe/Si[J]. Journal of Electronic Materials, 2006, 35(6): 1283-1286.

    [15] DE LEON N P, ITOH K M, KIM D, et al. Materials challenges and opportunities for quantum computing hardware[J]. Science, 2021, 372(6539): eabb2823.

    CHEN Fengwu, LYU Wenli, GONG Xin, XUE Yong, GONG Xiaoliang. Progress and Prospect of Molecular Beam Epitaxy Equipment at Home and Abroad[J]. Journal of Synthetic Crystals, 2024, 53(9): 1494
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