[1] Li W B,Zhao G Z,Wang F H,et al. Acta Photonica Sinica,2006,35(1):61～64

[2] Liu C H. Acta Photonica Sinica,2005,34 (11): 1740～1744

[3] Erlacher A,Ullrich B. All-optical digitizing of laser transmission through thin-film GaAs on glass. Semicona Sci Technol,2004,19 :L9～L12

[4] Hu S L,Xu X M,Yu T B. Acta Photonica Sinica,2004,33(8):1104-1106

[5] Le Ru E C,Siverns P D,Murray R. Luminescence enhancement from hydrogen-passivated self-assembled quantum dots. Applied Physics Letters,2000,77(16):2446～2448

[6] Kanemitsu Y,Tanaka H,Kushida T,et al. Luminescence properties of GaAs nanocrystals fabricated by sequential ion implantation. Luminescence,2000,87-89:432～434

[7] Wang H L,Zhu H J,Ning D,et al. Journal of Inforared and Millimeter Waves,,2000,19(1):191～193

[8] Ip K,Overberg M E,Heo Y W,et al. Hydrogen incorporation and diffusivity in plasma-exposed bulk ZnO. Applied Physics Letters,2003,82(3):385～387

[9] Naoki Ohashi,Takamasa Ishigaki,Nobuhiro Okada,etal.Effect of hydrogen doping on ultraviolet emission spectra of various types of ZnO. Applied Physics Letters,2002,80(16) :2869～2871

[10] Michihiro Sano,Kazuhiro Miyamoto,Hiroyuki Kato,et al. Role of hydrogen in molecular beam epitaxy of ZnO.Journal of Applied Physics,2004,95 (10): 5527～5531

[11] Seung Yeop Myong,Koeng Su Lim. Highly stable and textured hydrogenated ZnO thin films. Applied Physics Letters,2003,82(18) :3026～3028

[12] Ip K,Overberg M E,Heo Y W,et al. Thermal stability of ion-implanted hydrogen in ZnO. Applied Physics Letters 2002,81(21):3996～3998

[13] Brus L E. Electron-electron and electron-hole interactions in small semiconductor crystallites:The size dependence of the lowest excited electronic state. The journal of Chemical Physics,1984,80(9):4403～4409