A series of experment results about 0.95 μm Wavelength high energy luminous peak in 1.55 μm InGaAsP/InP laser ware reported in this paper.And by physics analysis to these data,we can be sured that the Auger compound of InGaAsP active region is the major cause of carrier leakage toward the two sides of InP restricted layer.It is also the major factor to reduce the To of 1.55 μm InGaAsP/InP DH laser.