Military targets require infrared (IR) stealth performance because of the rapid development of IR detection technology. In this study, an IR low-emissivity film based on a one-dimensional photonic crystal structure was designed and fabricated. The IR reflectance of the low-emissivity film was improved, and the total thickness of the film was reduced by optimizing its construction parameters. The thickness and optical parameters of the Ge and ZnS film prepared via vacuum evaporation were tested using an IR ellipsometer. The IR low-emissivity films with IR emissivities of 0.045, 0.097, 0.174, and 0.346 were prepared via vacuum evaporation after the optimized test results were incorporated into the crystal structure design. The IR reflectivity of the IR low-emissivity films was measured using a Fourier-transform IR spectrometer. The test results agreed well with the calculated results.