Infrared Transmission Spectroscopy of B+ implanted HgCdTe Epilayers

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Acta Photonica Sinica >Volume 34 >Issue 8 >Page 1179 > Article

Acta Photonica Sinica
Vol. 34, Issue 8, 1179 (2005)

Infrared Transmission Spectroscopy of B⁺ implanted HgCdTe Epilayers

[in Chinese], [in Chinese], [in Chinese], and [in Chinese]

Author Affiliations

[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese]. Infrared Transmission Spectroscopy of B⁺ implanted HgCdTe Epilayers[J]. Acta Photonica Sinica, 2005, 34(8): 1179 Copy Citation Text

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References

[1] Desterfanis G L. Electrical doping of HgCdTe by ion implantation and heat treatment.Journal of Crystal Growth,1988,86:700～722

[2] Declemy A,Renault P O. Characterization by diffuse Xray scattering of damage in ion-implanted HgCdTe.Journal of Crystal Growth,1996,161:139～143

[3] Margalit S,Nemirovsky Y, Rotstein I. Electrical properties of ion-implanted layers in HgCdTe.J Appl Phys,1979,50(10):6386～6389

[4] Herber Engstrom. Infrared reflectivity and transmissivity of boron-implanted, laser-annealed silicon.J Appl Phys, 1980,51(10):5245～5249

[7] Leveque P,Declemy A,Renault P O. Influence of extended structural defects on the effective carrier concentration of p-type Hg0.78Cd0.22Te implanted with aluminium ions.Nuclear Instruments and Methods in Physics Research B,2000,168:40～46

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[1] LI Chao, LI Xue, XU Jin-tong, LI Xiang-yang. Transmission Spectra of GaN and AlGaN Films[J]. Acta Photonica Sinica, 2009, 38(9): 2294

[2] JIAO Cui-ling, WANG Reng, ZHANG Li-ping, LIN Xin-chao, SHAO Xiu-hua, DU Yun-chen, LU Ye. Study on the Growth of Hgcdte Graded-Gap Films and the Infrared Transmission Spectra[J]. Acta Photonica Sinica, 2015, 44(8): 831002

[in Chinese], [in Chinese], [in Chinese], [in Chinese]. Infrared Transmission Spectroscopy of B⁺ implanted HgCdTe Epilayers[J]. Acta Photonica Sinica, 2005, 34(8): 1179

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