A CO2 laser rapid-thermal-annealing SiOx based metal-oxide-semiconductor light emitting diode

Chun-Jung Lin; Gong-Ru Lin

Journals >Chinese Optics Letters >Volume 5 >Issue 10 >Page 601 > Article

Chinese Optics Letters
Vol. 5, Issue 10, 601 (2007)

A CO2 laser rapid-thermal-annealing SiOx based metal-oxide-semiconductor light emitting diode

Chun-Jung Lin and Gong-Ru Lin

Author Affiliations

Graduate Institute of Photonics and Optoelectronics, Department of Electrical Engineering, National Taiwan University, Taipei 106

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Chun-Jung Lin, Gong-Ru Lin. A CO2 laser rapid-thermal-annealing SiOx based metal-oxide-semiconductor light emitting diode[J]. Chinese Optics Letters, 2007, 5(10): 601 Copy Citation Text

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Abstract

Enhanced near-infrared (NIR) electroluminescence (EL) of a metal-oxide-semiconductor light emitting device (MOSLED) made on CO2 laser-annealed SiOx film is demonstrated. An EL power of near 50 nW from CO2 laser rapid-thermal-annealing (RTA) MOSLED under a biased voltage of 85 V and a current density of 2.3 mA/cm2 is preliminarily reported.

Keywords

Chun-Jung Lin, Gong-Ru Lin. A CO2 laser rapid-thermal-annealing SiOx based metal-oxide-semiconductor light emitting diode[J]. Chinese Optics Letters, 2007, 5(10): 601

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