• Frontiers of Optoelectronics
  • Vol. 2, Issue 3, 345 (2009)
Guangcun SHAN1、2、* and Wei HUANG1、3
Author Affiliations
  • 1Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210003, China
  • 2State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
  • 3Faculty of Engineering, National University of Singapore, Singapore 117576, Singapore
  • show less
    DOI: 10.1007/s12200-009-0017-9 Cite this Article
    Guangcun SHAN, Wei HUANG. Photon properties of light in semiconductor microcavities[J]. Frontiers of Optoelectronics, 2009, 2(3): 345 Copy Citation Text show less

    Abstract

    Properties of atom-like emitters in cavities are successfully described by cavity quantum electrodynamics (cavity-QED). In this work, we focus on the issue of the steady-state and spectral properties of the light emitted by a driven microcavity containing a quantum well (QW) with the excitonic interactions using simulation of fully quantum-mechanical treatment. The system is coherently pumped with laser, and it is found that depending on the relative values of pumping rate of stimulated emission, either one or two peaks close to the excitation energy of the QW or to the natural frequency of the cavity are shown in the emission spectrum. Furthermore, the nonclassical proprieties of the emitted photon have been investigated. This excitonic system presents several dynamical and statistical similarities to the atomic system, in particular for the bad-cavity and good-cavity limits. The results show that the photon emission can be significantly amplified due to the coupling strength between a single emitter and radiation field in the microcavity, and it is concluded that the present semiconductor microcavity system may serve as a QW laser with low threshold.
    Guangcun SHAN, Wei HUANG. Photon properties of light in semiconductor microcavities[J]. Frontiers of Optoelectronics, 2009, 2(3): 345
    Download Citation