This paper presents a novel flip-chip (FC) structure design for 340 GHz Schottky diode detectors, which was designed and fabricated based on the gallium arsenide (GaAs) process. A ceramic thin-film supporting layer was used to provide a package for such detector. Conductive adhesive is typically used as attachment material between the antenna and output circuit. The behaviour of terahertz (THz) detectors with and without the novel FC structure was studied. For comparison, the FC structure model and wire bonding structure one (free of FC) were characterized using the same test system. A comparison analysis for the gains of the THz detector measured with and without the ceramic thin-film layer indicates that the novel FC structure offers a low-cost and practical solution for packaging the array of THz detectors.