Temperature Rise on a Semiconductor Substrate Locally Heated by 10.6 μm Laser Beam

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Journals >Chinese Journal of Lasers >Volume 31 >Issue 7 >Page 870 > Article

Chinese Journal of Lasers
Vol. 31, Issue 7, 870 (2004)

Temperature Rise on a Semiconductor Substrate Locally Heated by 10.6 μm Laser Beam

[in Chinese]^*, [in Chinese], [in Chinese], [in Chinese], and [in Chinese]

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Temperature Rise on a Semiconductor Substrate Locally Heated by 10.6 μm Laser Beam[J]. Chinese Journal of Lasers, 2004, 31(7): 870 Copy Citation Text

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References

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