• Optoelectronics Letters
  • Vol. 10, Issue 3, 180 (2014)
Wei LI1, Sheng-jiang CHANG1、*, Xiang-hui WANG1, Lie LIN1, and Jin-jun BAI2
Author Affiliations
  • 1Institute of Modern Optics, Nankai University, Tianjin 300071, China
  • 2School of Electronics and Information Engineering, Tianjin Polytechnic University, Tianjin 300387, China
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    DOI: 10.1007/s11801-014-3236-2 Cite this Article
    LI Wei, CHANG Sheng-jiang, WANG Xiang-hui, LIN Lie, BAI Jin-jun. A thermally tunable terahertz bandpass filter with insulator- metal phase transition of VO2thin film[J]. Optoelectronics Letters, 2014, 10(3): 180 Copy Citation Text show less

    Abstract

    A terahertz bandpass filter with the sandwich structure consisting of thermally tunable vanadium dioxide (VO2) thin film, silica substrate and subwavelength rectangular Cu hole arrays is designed and theoretically analyzed. The results show that the transmittance of the filter can be actively tuned by controlling the temperature of VO2, the narrow band terahertz (THz) waves with the transmittance from 85.2% to 10.5% can be well selected at the frequency of 1.25 THz when the temperature changes from 50 ℃ to 80 ℃, and the maximum modulation depth of this terahertz bandpass filter can achieve 74.7%.
    LI Wei, CHANG Sheng-jiang, WANG Xiang-hui, LIN Lie, BAI Jin-jun. A thermally tunable terahertz bandpass filter with insulator- metal phase transition of VO2thin film[J]. Optoelectronics Letters, 2014, 10(3): 180
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