• Chinese Journal of Lasers
  • Vol. 23, Issue 1, 29 (1996)
[in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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  • [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Design of InGaAs (P) Scparate-confinement-heterostruc Strained Quantum-well Lasers[J]. Chinese Journal of Lasers, 1996, 23(1): 29 Copy Citation Text show less

    Abstract

    The structural design with the largest net galn is presenteti for commonly-used InGaAsP separate-confinement-heterostruc (SCH) strained quantum-well lasers.The best wavelength and width of SCH layer are 1.24 μm and 1 00 nm for 1.55 μm unstrained single quantum-sell lasers.When compressive strain is introduced into the active layer,the best wavelength of SCH layer will be shorter because of the strain-induced reduction of state density and the enhancement of differential gain in quantum-well lasers.
    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Design of InGaAs (P) Scparate-confinement-heterostruc Strained Quantum-well Lasers[J]. Chinese Journal of Lasers, 1996, 23(1): 29
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