Fig. 1. The characterization of the ZrSiSe single crystals and nanoflakes: (a) The crystal structure of ZrSiSe; (b) the EDS spectrum of ZrSiSe crystal; (c) the single crystal X-ray-diffraction data of the (00n) surfaces of the sample; (d) the resistance varies with temperature at zero field. The inset is the optical graph of ZrSiSe flake device, and the white scale bar is 5 μm. ZrSiSe单晶及纳米片的表征　(a) ZrSiSe的晶体结构; (b) ZrSiSe晶体的EDS谱; (c) ZrSiSe晶体(00n)面的X射线衍射谱; (d) 零磁场下ZrSiSe纳米片电阻随温度的变化曲线. 内插图是纳米片器件的光学图, 其中白色基准尺为5 μm

Fig. 2. The SdH oscillations of ZrSiSe nanoflakes: (a) Magnetoresistance of ZrSiSe nanoflakes under perpendicular magnetic field at different temperatures; (b) the extracted SdH oscillations of magnetoresistance verus 1/B; (c) fast Fourier transformation spectra of the oscillation in (b); (d) the temperature dependence of FFT amplitude in (c). The solid line is a fit to the Lifshitz-Kosevich formula and gives the cyclotron effective mass of 0.13 m_e. ZrSiSe纳米片的SdH振荡　(a) 垂直磁场下ZrSiSe纳米片在不同温度下的磁阻; (b) 提取到的磁阻关于1/B的SdH振荡; (c) 图(b)中振荡的快速傅里叶变换; (d) 图(c)中随温度变化的FFT振幅. 实线是利用Lifshitz-Kosevich公式进行的拟合, 得到有效质量为0.13 m_e

Fig. 3. PHE measurement in ZrSiSe nanoflakes: (a) The measured PHE and the corresponding fitting curves under different B fields when the temperature is 2 K; (b) the amplitude of PHE varies with magnetic field when temperature is 2 K. The inset displays the schematic of the device configuration for PHE measurement; (c) angle dependence of the planar Hall resistance taken at different temperatures when the field is 9 T; (d) the amplitude of PHE varies with temperature when the field is 9 T.ZrSiSe纳米片中PHE的观测　(a) T = 2 K时, 不同磁场下的PHE以及相应的拟合曲线; (b) T = 2 K时, PHE振幅随磁场强度大小的变化. 内插图是PHE测量的器件示意图; (c) B = 9 T时, 不同温度下的PHE以及相应的拟合曲线; (d) B = 9 T时, PHE振幅随温度的变化

Fig. 4. Origin of the measured PHE: (a) In-plane AMR verus angle θ at various fields when temperature is 2 K. Solid red curves represent the fitting curves; (b) the amplitude of AMR varies with field at 2 K. The cyan curve is the power law fit curve for the experimental data points; (c) R_⊥ and R_|| extracted from the experimental date in panel (a). the red and blue solid curves represent the power law fit curves for R_⊥ and R_||, respectively; (d) the orbits obtained by plotting R_xx and R_yx with θ as the parameter at specific magnetic field. ZrSiSe中PHE的起源　(a) T = 2 K时, 不同磁场下的平面AMR. 红色实线是利用公式拟合得到的曲线; (b) T = 2 K时, 平面AMR振幅随磁场的变化. 青色实线是对实验数据点进行的幂函数拟合曲线; (c) 从图(a)中提取的R_⊥和R_||随磁场的变化; (d) 不同磁场下, 以θ为参量得到的R_xx-R_yx关系曲线