Molybdenum thin films fabricated by rf and dc sputtering for Cu(In,Ga)Se2 solar cell applications

Beibei Guo; Yaoming Wang; Xiaolong Zhu; Mingsheng Qin; Dongyun Wan; Fuqiang Huang

doi:10.3788/COL201614.043101

Journals >Chinese Optics Letters >Volume 14 >Issue 4 >Page 043101 > Article

Chinese Optics Letters
Vol. 14, Issue 4, 043101 (2016)

Molybdenum thin films fabricated by rf and dc sputtering for Cu(In,Ga)Se₂ solar cell applications

Beibei Guo¹, Yaoming Wang², Xiaolong Zhu², Mingsheng Qin²..., Dongyun Wan^1,* and Fuqiang Huang²|Show fewer author(s)

Author Affiliations

¹School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China

²CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China

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DOI: 10.3788/COL201614.043101 Cite this Article Set citation alerts

Beibei Guo, Yaoming Wang, Xiaolong Zhu, Mingsheng Qin, Dongyun Wan, Fuqiang Huang, "Molybdenum thin films fabricated by rf and dc sputtering for Cu(In,Ga)Se₂ solar cell applications," Chin. Opt. Lett. 14, 043101 (2016) Copy Citation Text

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Fig. 1. XRD patterns of as-deposited Mo films prepared by dc and rf magnetron sputtering, respectively, as a function of the supplied power.

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SEM images of the Mo films prepared by dc and rf magnetron sputtering, respectively, with different supplied powers: (a) rf 80 W, (b) rf 100 W, (c) rf 120 W, (d) dc 80 W, (e) dc 100 W, and (f) dc 120 W.

Fig. 2. SEM images of the Mo films prepared by dc and rf magnetron sputtering, respectively, with different supplied powers: (a) rf 80 W, (b) rf 100 W, (c) rf 120 W, (d) dc 80 W, (e) dc 100 W, and (f) dc 120 W.

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Fig. 3. AFM images of the Mo films prepared by dc and rf magnetron sputtering, respectively, with different supplied powers, revealing the differences in grain size and morphology: (a) rf 80 W, (b) rf 100 W, (c) rf 120 W, (d) dc 80 W, (e) dc 100 W, and (f) dc 120 W.

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Fig. 4. Cross-sectional SEM images of the Mo films deposited at 100 and 120 W by rf and dc sputtering, respectively: (a) rf 100 W, (b) dc 100 W, (c) rf 120 W, (d) dc 120 W. (e) Bright-field TEM micrograph from the dc-120 W Mo film.

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Fig. 5. (a) SEM cross-sectional image of the glass/Mo/CIGS sample after selenization, (b) I-V characteristic of the CIGS solar cells.

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Sample	CPS	FWHM $(2 θ)$	Grain Size from AFM (nm)	Thickness (μm)	Roughness (Å)	$R (Ω / sq)$	$ρ$ $(μΩ \cdot cm)$
dc-80 W	471.6	0.559	37.5	0.92	22.3	0.31	63.7
dc-100 W	1041.2	0.409	68.7	1.38	49.6	0.23	28.1
dc-120 W	1620.6	0.280	158.3	1.85	162	0.14	10.2
rf-80 W	150.8	1.013	22.7	0.78	20.8	0.47	102.9
rf-100 W	688.9	0.442	42.1	1.13	26.6	0.38	56.6
rf-120 W	1059.4	0.401	70.6	1.42	50.3	0.24	27.8