Author Affiliations
1School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China2CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, Chinashow less
Fig. 1. XRD patterns of as-deposited Mo films prepared by dc and rf magnetron sputtering, respectively, as a function of the supplied power.
Fig. 2. SEM images of the Mo films prepared by dc and rf magnetron sputtering, respectively, with different supplied powers: (a) rf 80 W, (b) rf 100 W, (c) rf 120 W, (d) dc 80 W, (e) dc 100 W, and (f) dc 120 W.
Fig. 3. AFM images of the Mo films prepared by dc and rf magnetron sputtering, respectively, with different supplied powers, revealing the differences in grain size and morphology: (a) rf 80 W, (b) rf 100 W, (c) rf 120 W, (d) dc 80 W, (e) dc 100 W, and (f) dc 120 W.
Fig. 4. Cross-sectional SEM images of the Mo films deposited at 100 and 120 W by rf and dc sputtering, respectively: (a) rf 100 W, (b) dc 100 W, (c) rf 120 W, (d) dc 120 W. (e) Bright-field TEM micrograph from the dc-120 W Mo film.
Fig. 5. (a) SEM cross-sectional image of the glass/Mo/CIGS sample after selenization, (b) I-V characteristic of the CIGS solar cells.
Sample | CPS | FWHM | Grain Size from AFM (nm) | Thickness (μm) | Roughness (Å) | | |
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dc-80 W | 471.6 | 0.559 | 37.5 | 0.92 | 22.3 | 0.31 | 63.7 | dc-100 W | 1041.2 | 0.409 | 68.7 | 1.38 | 49.6 | 0.23 | 28.1 | dc-120 W | 1620.6 | 0.280 | 158.3 | 1.85 | 162 | 0.14 | 10.2 | rf-80 W | 150.8 | 1.013 | 22.7 | 0.78 | 20.8 | 0.47 | 102.9 | rf-100 W | 688.9 | 0.442 | 42.1 | 1.13 | 26.6 | 0.38 | 56.6 | rf-120 W | 1059.4 | 0.401 | 70.6 | 1.42 | 50.3 | 0.24 | 27.8 |
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Table 1. Structural and Electrical Properties of the As-Deposited Mo Films