• Chinese Optics Letters
  • Vol. 14, Issue 4, 043101 (2016)
Beibei Guo1, Yaoming Wang2, Xiaolong Zhu2, Mingsheng Qin2, Dongyun Wan1、*, and Fuqiang Huang2
Author Affiliations
  • 1School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
  • 2CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
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    DOI: 10.3788/COL201614.043101 Cite this Article Set citation alerts
    Beibei Guo, Yaoming Wang, Xiaolong Zhu, Mingsheng Qin, Dongyun Wan, Fuqiang Huang. Molybdenum thin films fabricated by rf and dc sputtering for Cu(In,Ga)Se2 solar cell applications[J]. Chinese Optics Letters, 2016, 14(4): 043101 Copy Citation Text show less
    XRD patterns of as-deposited Mo films prepared by dc and rf magnetron sputtering, respectively, as a function of the supplied power.
    Fig. 1. XRD patterns of as-deposited Mo films prepared by dc and rf magnetron sputtering, respectively, as a function of the supplied power.
    SEM images of the Mo films prepared by dc and rf magnetron sputtering, respectively, with different supplied powers: (a) rf 80 W, (b) rf 100 W, (c) rf 120 W, (d) dc 80 W, (e) dc 100 W, and (f) dc 120 W.
    Fig. 2. SEM images of the Mo films prepared by dc and rf magnetron sputtering, respectively, with different supplied powers: (a) rf 80 W, (b) rf 100 W, (c) rf 120 W, (d) dc 80 W, (e) dc 100 W, and (f) dc 120 W.
    AFM images of the Mo films prepared by dc and rf magnetron sputtering, respectively, with different supplied powers, revealing the differences in grain size and morphology: (a) rf 80 W, (b) rf 100 W, (c) rf 120 W, (d) dc 80 W, (e) dc 100 W, and (f) dc 120 W.
    Fig. 3. AFM images of the Mo films prepared by dc and rf magnetron sputtering, respectively, with different supplied powers, revealing the differences in grain size and morphology: (a) rf 80 W, (b) rf 100 W, (c) rf 120 W, (d) dc 80 W, (e) dc 100 W, and (f) dc 120 W.
    Cross-sectional SEM images of the Mo films deposited at 100 and 120 W by rf and dc sputtering, respectively: (a) rf 100 W, (b) dc 100 W, (c) rf 120 W, (d) dc 120 W. (e) Bright-field TEM micrograph from the dc-120 W Mo film.
    Fig. 4. Cross-sectional SEM images of the Mo films deposited at 100 and 120 W by rf and dc sputtering, respectively: (a) rf 100 W, (b) dc 100 W, (c) rf 120 W, (d) dc 120 W. (e) Bright-field TEM micrograph from the dc-120 W Mo film.
    (a) SEM cross-sectional image of the glass/Mo/CIGS sample after selenization, (b) I-V characteristic of the CIGS solar cells.
    Fig. 5. (a) SEM cross-sectional image of the glass/Mo/CIGS sample after selenization, (b) I-V characteristic of the CIGS solar cells.
    SampleCPSFWHM (2θ)Grain Size from AFM (nm)Thickness (μm)Roughness (Å)R(Ω/sq)ρ(μΩ·cm)
    dc-80 W471.60.55937.50.9222.30.3163.7
    dc-100 W1041.20.40968.71.3849.60.2328.1
    dc-120 W1620.60.280158.31.851620.1410.2
    rf-80 W150.81.01322.70.7820.80.47102.9
    rf-100 W688.90.44242.11.1326.60.3856.6
    rf-120 W1059.40.40170.61.4250.30.2427.8
    Table 1. Structural and Electrical Properties of the As-Deposited Mo Films
    Beibei Guo, Yaoming Wang, Xiaolong Zhu, Mingsheng Qin, Dongyun Wan, Fuqiang Huang. Molybdenum thin films fabricated by rf and dc sputtering for Cu(In,Ga)Se2 solar cell applications[J]. Chinese Optics Letters, 2016, 14(4): 043101
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