• Acta Photonica Sinica
  • Vol. 48, Issue 5, 526002 (2019)
MA Guang-hui*, ZHANG Jia-bin, WANG Xiao-yi, SHI Lin-lin, JIN Liang, LI Yang, XU Ying-tian, and ZHANG He
Author Affiliations
  • [in Chinese]
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    DOI: 10.3788/gzxb20194805.0526002 Cite this Article
    MA Guang-hui, ZHANG Jia-bin, WANG Xiao-yi, SHI Lin-lin, JIN Liang, LI Yang, XU Ying-tian, ZHANG He. Gold Localized Surface Plasmon Enhanced Luminescence Characteristics of Gallium Arsenide[J]. Acta Photonica Sinica, 2019, 48(5): 526002 Copy Citation Text show less

    Abstract

    The near field luminescence enhancement of gallium arsenide thin films was achieved by studying the local surface plasmon resonance coupling effect of gold nanoparticles. By calculating the absorption spectrum and electric field distribution of gold nanoparticles theoretically, the effects of changing the shape and size of metal nanoparticles on the regulation of plasmon resonance frequency and local field enhancement were analyzed. A near field enhancement effect of 35 times was achieved by simulating gold nanoparticles with a radius of 50 nm. Through the simulation of double sphere shape, an active way of gold particle enhanced GaAs was analyzed, that is, the coupling between dense particles, forming "hotspots" and accompanying the enhancement effect of local field. In addition, the effects of sputtering time and rapid annealing on the absorption characteristics of gold nanoparticles were investigated. The absorption peak of the nanoparticles is mainly located in the 560~680 nm band. Moreover, the red shift occurs with the increasing of sputtering time. After rapid annealing, the absorption peak of gold nanoparticles shifts blue to 510~550 nm band, forming a resonance absorption peak matching the excitation wavelength of 532 nm. Finally, the photoluminescence of gallium arsenide thin film is enhanced by 9.6 times.
    MA Guang-hui, ZHANG Jia-bin, WANG Xiao-yi, SHI Lin-lin, JIN Liang, LI Yang, XU Ying-tian, ZHANG He. Gold Localized Surface Plasmon Enhanced Luminescence Characteristics of Gallium Arsenide[J]. Acta Photonica Sinica, 2019, 48(5): 526002
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