Author Affiliations
1State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China2Guangdong Institute of Electronic Information Engineering, University of Electronic Science and Technology, Dongguan 523808, Chinashow less
Fig. 1. (a) Experimental setup of optical pump-probe spectroscopy in reflection configuration; (b) typical optical pump-probe signal of GaAs.(a)反射式光学抽运-光学探测光路; (b)GaAs的典型的光学抽运-光学探测信号
Fig. 2. (a) Electro-optic sampling
[15]; (b) experimental setup of OPTP spectroscopy.
(a) 电光采样法
[15]; (b) OPTP光谱光路示意图
Fig. 3. (a) Schematic of magneto-optic Kerr effect
[9]; (b) TRKR
[8] via pump-probe technique.
(a)磁光克尔效应的原理
[9]; (b)基于抽运-探测技术的时间分辨克尔旋转光谱示意图
[8] Fig. 4. Schematic of (a) ARPES and (b) Tr-ARPES
[23] setups.
(a) ARPES 和(b) Tr-ARPES
[23]实验平台示意图
Fig. 5. (a), (b) Transient reflectivity of Bi
2Se
3 measured via OPOP at room temperature
[7,11]. The red squares in (b) show the full width half maximum of the probe light’s spot as a function of delay time
[11].
(a), (b)室温下Bi
2Se
3单晶的OPOP信号
[7,11], 其中图(b)中红色方框为探测光在Bi
2Se
3样品表面上的光斑的半高全宽随时间延时的变化
[11] Fig. 6. OPTP signals of Bi
2Se
3 thin film
[32]: (a) Conductance of Bi
2Se
3 without optical pump; (b) transmitted terahertz electric field after sample under optical pump; (c), (d) transient THz peak signal of samples with different thickness and pump power; (e)—(h) scattering rate and plasma frequency obtained from the fitting of conductance of Bi
2Se
3 by Drude-Lorentz model with different sample thickness and pump delay.
Bi
2Se
3薄膜的OPTP信号
[32] (a)无光抽运下的Bi
2Se
3电导; (b)有光抽运下透过Bi
2Se
3的太赫兹波形; (c), (d)不同样品厚度以及不同功率下太赫兹电场峰值随着抽运延时变化; (e)—(h)为在不同抽运延迟下, 通过用Drude-Lorentz拟合的对于不同厚度样品散射率和等离子频率
Fig. 7. (a), (b) OPTP signals of Bi
1.5Sb
0.5Te
1.7Se
1.3 (BSTS) and Bi
2Se
3; (c), (d) schematic diagrams of energy bands and electron transfer in BSTS and Bi
2Se
3[35](a), (b) Bi
1.5Sb
0.5Te
1.7Se
1.3(BSTS)和Bi
2Se
3的OPTP信号; (c), (d)BSTS和Bi
2Se
3的能带结构示意图和电子转移
[35] Fig. 8. Experimental Tr-ARPES data
[13]: (a) The relaxation process for different bands of p-doped Bi
2Se
3 excited by light; (b) schematic of the electronic band structures of Bi
2Se
3 for reference; (c) electronic band structures for Bi
2Se
3, and the surface states and bulk conduction band are unoccupied due to the Fermi energy sitting inside the bulk valence band; (d) electrons are excited to high energy band after the excitation; (e)–(g) relaxation process of high energy electrons.
Bi
2Se
3的Tr-ARPES信号
[13] (a) p型掺杂的Bi
2Se
3受光激发后不同能带的弛豫过程; (b)用于参考的Bi
2Se
3的能带; (c)平衡态Bi
2Se
3的能带结构, 由于掺杂导致费米能级较低, 表面态和体态导带并没有被占据; (d)在刚刚被抽运光激发时, 电子被激发到较高能级处; (e)—(g)则描述了较高能量的电子的弛豫过程
Fig. 9. Electron temperature of Bi
2Se
3 obtained by Tr-ARPES from Shen's group (a)
[13] and Gedik's group (b)
[36].
由Shen研究组(a)
[13]和Gedik研究组(b)
[36]利用Tr-ARPES所测得的Bi
2Se
3电子温度数据
Fig. 10. OPOP experimental data and Fourier transform of the oscillatory data for Bi
2Se
3 at 293 K
[8].
Bi
2Se
3的OPOP实验数据及其傅里叶变换结果
[8] Fig. 11. Experimental Tr-ARPES data of Bi
2Se
3[48].
Bi
2Se
3的Tr-ARPES实验数据图
[48] Fig. 12. Photoinduced relaxation processes of carriers and spin in Bi
2Se
3[14]: (a)−(d) correspond to the relaxation processes of different time scales
Bi
2Se
3中载流子和自旋在光激发下的弛豫过程图示
[14] (a)−(d)不同时间尺度下的弛豫过程
Fig. 13. (a) Time-resolved Kerr rotation of Bi
2Se
3 at 10 K and 80 K. Red line indicates that the pump laser is left circularly polarized while the blue one is right circularly polarized
[8]. (b) Time-resolved Kerr rotation of Bi
2Se
3 excited at different photon energies for different temperatures
[8]. (c) fittings of the TRKR experimental data for Bi
2Se
3[8]. (d) Kerr rotation experimental data via second harmonic generation(oblique pump)
[14]. (e)−(h) transient reflectivity corresponding to the left and right circularly polarized pump light
[53].
(a) Bi
2Se
3样品在10 K和80 K时的克尔转角光谱, 红线代表抽运激光为左旋圆偏振光, 蓝色实线代表右旋圆偏振光
[8]; (b) Bi
2Se
3样品在不同光子能量和不同温度下的克尔转角光谱
[8]; (c) Bi
2Se
3实验数据拟合
[8]; (d)二次谐波克尔光谱(斜入射抽运光)测得的实验数据
[14]; (e)−(h)左右圆偏振光激发后反射率变化随时间变化的实验数据
[53] Fig. 14. Schematic of photo-excitation processes via light with different photon energies in Bi
2Se
3[8].
Bi
2Se
3在不同光子能量激发下的能带跃迁示意图
[8]