Comparative studies of semiconductor saturable absorber mirror mode-locking dynamics in pulsed diode-end-pumped picosecond Nd:GdVO4 and Nd:YAG lasers

Bingyuan Zhang; Gang Li; Meng Chen; Guoju Wang; Yonggang Wang

Journals >Chinese Optics Letters >Volume 4 >Issue 6 >Page 336 > Article

Chinese Optics Letters
Vol. 4, Issue 6, 336 (2006)

Comparative studies of semiconductor saturable absorber mirror mode-locking dynamics in pulsed diode-end-pumped picosecond Nd:GdVO4 and Nd:YAG lasers

Bingyuan Zhang^1、2、*, Gang Li¹, Meng Chen¹, Guoju Wang², and Yonggang Wang³

Author Affiliations

¹College of Laser Engineering, Beijing University of Technology, Beijing 100022

²College of Physics Science and Information Engineering, Liaocheng University, Liaocheng 252059

³Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100081

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Bingyuan Zhang, Gang Li, Meng Chen, Guoju Wang, Yonggang Wang. Comparative studies of semiconductor saturable absorber mirror mode-locking dynamics in pulsed diode-end-pumped picosecond Nd:GdVO4 and Nd:YAG lasers[J]. Chinese Optics Letters, 2006, 4(6): 336 Copy Citation Text

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Abstract

Ultrashort pulses were generated in passively mode-locked Nd:YAG and Nd:GdVO4 lasers pumped by a pulsed laser diode with 10-Hz repetition rate. Stable mode-locked pulse trains were produced with the pulse width of 10 ps. The evolution of the mode-locked pulse was observed in the experiment and was discussed in detail. Comparing the pulse evolutions of Nd:YAG and Nd:GdVO4 lasers, we found that the buildup time of the steady-state mode-locking with semiconductor saturable absorber mirrors (SESAMs) was relevant to the upper-state lifetime and the emission cross-section of the gain medium.

Keywords

140.3070 140.3480 140.3530 140.4050

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