Experimental spectra study of Tm:GdVO4 microchip laser at room temperature

[in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Optics Letters >Volume 5 >Issue 6 >Page 351 > Article

Chinese Optics Letters
Vol. 5, Issue 6, 351 (2007)

Experimental spectra study of Tm:GdVO4 microchip laser at room temperature

[in Chinese]^*, [in Chinese], and [in Chinese]

Author Affiliations

National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology, Harbin 150001

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[in Chinese], [in Chinese], [in Chinese]. Experimental spectra study of Tm:GdVO4 microchip laser at room temperature[J]. Chinese Optics Letters, 2007, 5(6): 351 Copy Citation Text

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Abstract

A high efficient diode-pumped Tm:GdVO4 microchip laser is demonstrated. Output power of 310 mW at 1917 nm with slope efficiency of 22% is produced when pumped by 2 W of power at 802 nm. Unpolarized fluorescence spectra near 1800 nm pumped by laser diode are measured. In addition, the most important upconversion fluorescence from 1D2 to 3F4 and 3H6 levels is discussed.

Keywords

140.3070 140.3480 140.3580 Tm:GdVO4

[in Chinese], [in Chinese], [in Chinese]. Experimental spectra study of Tm:GdVO4 microchip laser at room temperature[J]. Chinese Optics Letters, 2007, 5(6): 351

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