Bismuth (Bi)-doped materials have attracted a great deal of attention because of their broadband nearinfrared (near-IR) emission around the wavelength utilized in telecommunications. In this study, broad near-IR emission band from 1 100 to 1 650 nm is generated in the Bi-doped 90GeS2-10Ga2S3 glass and glass-ceramics under 820 nm of light excitation. Based on the analysis of the absorption and emission spectra, the origin of this broadband emission is ascribed to the Bi^{2-}_{2} dimers. The precipitation of \beta-GeS2 nanocrystals drastically enhances the emission intensity and lifetime of Bi-doped chalcogenide glass.