Electro-optic effects induced by the built-in electric field in a {001}-cut silicon crystal

Qi Wang; Zhang Hai; Nian Liu; Baijun Zhao; Xiuhuan Liu; Lixin Hou; Yanjun Gao; Gang Jia; Zhanguo Chen

doi:10.3788/COL201614.012301

Journals >Chinese Optics Letters >Volume 14 >Issue 1 >Page 012301 > Article

Chinese Optics Letters
Vol. 14, Issue 1, 012301 (2016)

Electro-optic effects induced by the built-in electric field in a {001}-cut silicon crystal

Qi Wang¹, Zhang Hai¹, Nian Liu¹, Baijun Zhao⁴, Xiuhuan Liu^2、**, Lixin Hou³, Yanjun Gao¹, Gang Jia¹, and Zhanguo Chen^1、*

Author Affiliations

¹State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China

²College of Communication Engineering, Jilin University, Changchun 130012, China

³College of Information Technology, Jilin Agricultural University, Changchun 130118, China

⁴Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, China

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DOI: 10.3788/COL201614.012301 Cite this Article Set citation alerts

Qi Wang, Zhang Hai, Nian Liu, Baijun Zhao, Xiuhuan Liu, Lixin Hou, Yanjun Gao, Gang Jia, Zhanguo Chen. Electro-optic effects induced by the built-in electric field in a {001}-cut silicon crystal[J]. Chinese Optics Letters, 2016, 14(1): 012301 Copy Citation Text

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Abstract

Pockel’s effect and optical rectification induced by the built-in electric field in the space charge region of a silicon surface layer are demonstrated in a {001}-cut high-resistance silicon crystal. The half-wave voltage is about 203 V, deduced by Pockel’s effect. The ratio

χ_{z x x}^{(2)} / χ_{z z z}^{(2)}

is calculated to be about 0.942 according to optical rectification. Our comparison with the Kerr signal shows that Pockel’s signal is much stronger. This indicates that these effects are so considerable that they should be taken into account when designing silicon-based photonic devices.