• Optics and Precision Engineering
  • Vol. 19, Issue 2, 452 (2011)
SHAN Xiao-nan*, LIU Yun, and CAO Jun-sheng
Author Affiliations
  • [in Chinese]
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    DOI: Cite this Article
    SHAN Xiao-nan, LIU Yun, CAO Jun-sheng. 808 nm kW-output high-efficiency diode laser sources[J]. Optics and Precision Engineering, 2011, 19(2): 452 Copy Citation Text show less

    Abstract

    A kind of beam shaping technique was presented to improve the beam quality of a semiconductor laser and to achieve the beam splitting,translating,and rearranging by a parallel plate glass stack.The experiment uses a 20-layer 808 nm semiconductor laser array designed by ourselves with the output power of 60 W per bar,19 light-emitting points of 1 μm×135 μm each and 30% filling factor to expand beam at a slow axis through a telescope system,and also uses a focusing lens to focus on both the slow axis and the fast one at the same time. Experiments show that the technique can achieve the 1 kW output power on the focal plane,focused spot of 1 mm×1 mm and coupling efficiency of 90%,which basically satisfies the needs of laser cladding and welding.
    SHAN Xiao-nan, LIU Yun, CAO Jun-sheng. 808 nm kW-output high-efficiency diode laser sources[J]. Optics and Precision Engineering, 2011, 19(2): 452
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