In this paper, a method of producing Si-cup by using Si anisotropic etching technique combined with an argon laser is discussed. We have used a focused laser beam to perform the localized etching on the <100>Si. The results from the experiment show that laser irradiation can enhance etching removal rates of Si in KOH. An averaged instantaneous etching rate as high as 21 μm/min has been observed in silicon for a 3 W input laser power. The chemical etching rates dependence on the laser power and on the temperature are further studied.