• Acta Photonica Sinica
  • Vol. 46, Issue 3, 325001 (2017)
HU Wei1、*, ZENG Qing-gao1, YE Si-rong1, and YANG Li-feng2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.3788/gzxb20174603.0325001 Cite this Article
    HU Wei, ZENG Qing-gao, YE Si-rong, YANG Li-feng. Epitaxial Structure of Multiple Quantum Well and Its LP-MOCVD Growth for GaAs/AlxGa1-xAs[J]. Acta Photonica Sinica, 2017, 46(3): 325001 Copy Citation Text show less
    References

    [1] IGA K. Surface-emitting laser-its birth and generation of new optoelectronics field[J]. IEEE Journal of Selected Topics in Quantum Electronics, 2000, 6(6): 1201-1215.

    [2] SODA H, IGA K, KITAHARA C, et al. GaInAsP/InP surface emitting injection lasers[J]. Japanese Journal of Applied Physics, 1979, 18(12): 2329-2330.

    [3] KOYAMA F, KINOSHITA S, IGA K. Room-temperature continuous wave lasing characteristics of GaAs vertical cavity surface-emitting laser[J]. Applied Physics Letters, 1989, 55(3): 221-222.

    [4] FURUKAWA A, SASAKI S, HOSHI M, et al. High-power single-mode vertical-cavity surface-emitting lasers with triangular holey structure[J]. Applied Physics Letters, 2004, 85(22): 5161-5163.

    [5] ZHANG Jian, NING Yong-qiang, ZHANG Jian-wei, et al. 795nm VCSELs for 87Rb based miniaturized atomic clock[J]. Oprics and Precision Engineering, 2014, 22(1): 50-57.

    [6] LIU Li-jie, WU Yuan-da, WANG Yue, et al. Research progress of 1 310 nm VCSELs chip technology[J]. Chinese Journal of Luminescence, 2016, 37(7): 809-815

    [7] ZHANG Jin-sheng, LIU Xiao-li, CUI Jin-jiang, et al. High peak power 808nm vertical-cavity surface-emitting laser array[J]. Chinese Journal of Luminescence, 2014, 35(9): 1098-1103.

    [8] NISHIYAMA N, CANEAU C, TSUDA S, et al. 10-Gb/s error-free transmission under optical reflection using isolator-free 1.3 μm InP-based vertical-cavity surface-emitting lasers[J]. IEEE Photonics Technology Letters, 2005, 17( 8): 1605-1607.

    [9] IGA K. Vertical cavity surface emitting laser: Its conception and evolution[J]. Japanese Journal of Applied Physics, 2008, 47(1): 1-10.

    [10] ONOMURA A, ARAI M, KONDO T, et al. Densely integrated multiple-wavelength vertical-cavity surface-emitting laser array[J]. Japanese Journal of Applied Physics, 2003, 42(5): 529-531.

    [11] PARK S, AHN D. Spontaneous emission and optical gain characteristics of blue InGaAlN/InGaN quantum well structures with reduced internal field[J]. Journal of Applied Physics, 2012, 112: 043107.

    [12] SOMPIE S, URANUS H. The transverse modal properties of VCSEL with photonic crystal cladding of rectangular lattice pattern[J]. Procedia Engineering, 2012, 50(9): 388-396.

    [13] KALER R. Performance evaluation of VCSEL through single and multi mode fibers[J]. Optik-International Journal for Light and Electron Optics, 2012, 123(10): 911-914.

    [14] KOYAMA F. Advances and new functions of VCSEL photonics[J]. Optical Review, 2014, 21(6): 893-904.

    [15] CAI Li-e, ZHANG Bao-ping, ZHANG Jiang-yong, et al. Fabrication and characteristics of GaN-based blue VCSEL[J]. Chinese Journal of Luminescence, 2016, 37(4): 452-456.

    [16] WANG Jin-hui, SAVIDIS I, FRIEDMAN E. Thermal analysis of oxide-confined VCSEL arrays[J]. Microelectronics Journal, 2011, 42(5): 820-825.

    [17] IGA K. Vertical-Cavity Surface-Emitting Laser (VCSEL)[C]. Proceedings of The IEEE, 2013, 101(10): 2229-2233.

    [18] REN Hong-wen, LIU Shi-wen, XU Xian-gang, et al. Assessment on MOCVD growth techniques of GaAs/AIGaAs quantum heterostructures[J]. Journal of Synthetic Crystal, 1993, 22(2): 132-135.

    [19] ZHENG Xin-he, XIA Yu, LIU San-jie, et al. MBE grouth of GaNAs-based superlattice solar cells and clevice properties[J]. Chinese Journal of Luminescence, 2015, 36(8): 923-929.

    HU Wei, ZENG Qing-gao, YE Si-rong, YANG Li-feng. Epitaxial Structure of Multiple Quantum Well and Its LP-MOCVD Growth for GaAs/AlxGa1-xAs[J]. Acta Photonica Sinica, 2017, 46(3): 325001
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